A semiconductor device manufacturing method includes a molding step including disposing a control pin between an inlet and a control wire and on a line connecting the inlet and the control wire in a plan view of the semiconductor device, injecting molding resin raw material into a cavity through the inlet, filling the cavity with the molding resin raw material, and sealing a semiconductor chip and a control element disposed on a main current lead frame and a control lead frame. In this way, the flow velocity of the molding resin raw material flowing to the control wire is reduced.

In one general aspect, a semiconductor device package can include a die attach paddle having a first surface and a second surface that is opposite the first surface. The package can also include a semiconductor die coupled with the first surface of the die attach paddle. The package can further include a direct-bonded-metal (DBM) substrate. The DBM substrate can include a ceramic layer having a first surface and a second surface that is opposite the first surface; a first metal layer disposed on the first surface of the ceramic layer and coupled with the second surface of the die attach paddle; and a second metal layer disposed on the second surface of the ceramic layer. The second metal layer can be exposed external to the semiconductor device package. The second metal layer can be electrically isolated from the first metal layer by the ceramic layer.

A semiconductor device includes a first lead, a second lead, a control element, an insulating element, and a driver element. The control element and insulating element are mounted on a first pad portion of the first lead, while the driver element on a second pad portion of the second lead. In plan view, the first pad portion has a first edge adjacent to the second pad portion in a first direction and extending in a second direction perpendicular to the first direction. The first edge has first and second ends opposite in the second direction. The second pad portion has a second edge adjacent to the first edge and extending in the second direction. The second edge has third and fourth ends opposite in the second direction. One of the third and fourth end is located between the first and second end in the second direction.

In some examples, a semiconductor package includes a semiconductor die having a device side and a non-device side opposing the device side. The device side has a circuit formed therein. The package includes a first conductive member having a first surface coupled to the non-device side of the semiconductor die and a second surface opposing the first surface. The second surface is exposed to a top surface of the semiconductor package. The package includes a second conductive member exposed to an exterior of the semiconductor package and coupled to the device side of the semiconductor die. The package includes a plurality of wirebonded members coupled to the second surface of the first conductive member and exposed to the exterior of the semiconductor package. At least one of the wirebonded members in the plurality of wirebonded members has a gauge of at least 5 mils.

A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.

A semiconductor device includes at least one semiconductor element having a switching function; a conductive member that forms a path of a current switched by the semiconductor element, and that is made of a first material; and a covering layer that covers at least a portion of the conductive member, and that is made of a second material. The second material satisfies at least one of the following three requirements: (a) having a magnetic permeability higher than the first material; (b) having an electrical resistivity higher than the first material; and (c) having a dielectric loss tangent larger than zero.

The semiconductor device includes an insulating substrate on which is mounted a main circuit part including a semiconductor chip, a printed substrate wherein a conductive connection member connected to the semiconductor chip is disposed on the surface opposing the insulating substrate, a first sealing member that seals so as to enclose the semiconductor chip between the opposing surfaces of the insulating substrate and printed substrate, and a second sealing member that covers the whole excepting a bottom portion of the insulating substrate, the semiconductor device having sealing region regulation rod portions disposed in an outer peripheral portion of a sealing region of the first sealing member and connected between the insulating substrate and printed substrate, wherein the heat resistance temperature of the first sealing member is set to be higher than the heat resistance temperature of the second sealing member.

A lead frame structure of a light emitting diode includes a ceramic bed, a metal layer and a plastic seat. The metal layer has a first metal circuit area, a second metal circuit area, a gap dividing the first metal circuit area and the second metal circuit area, and a metal ring surrounding the first metal circuit area, the second metal circuit area and the gap. The plastic seat has a hollow function area. The first metal circuit area, the second metal circuit area and a part of the metal ring expose the function area to make the metal (circuit) layer of the function area has no gap to avoid excess glue. This can efficiently accomplish to increase intensity, quality and reliability of the packaged products.

A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

A method of manufacturing a lead frame includes providing an electrically conductive layer having a plurality of holes at a top surface. The plurality of holes form a structure of leads and a die pad on the electrically conductive layer. The plurality of holes are filled with a non-conductive material. Next; an electrically conductive foil is attached on the top surface of the electrically conductive layer and the non-conductive epoxy material. The, the electrically conductive foil is etched to create a network of leads, die pad, bus lines, dam bars and tie lines, wherein the bus lines connect the leads to the dam bar, the dam bar is connected to the tie line and the tie line is connected to the die pad.