The present invention provides a QFN packaging structure and QFN packaging method. By providing the insulating layer on the outer side of the leads of the QFN packaging structure, a short circuit between the leads and the electromagnetic shielding layer can be prevented. In addition, the grounding lead is exposed from the insulating layer, such that the electromagnetic shielding layer is grounded via the grounding lead, thereby realizing the electromagnetic shielding design of the QFN packaging structure.

Provided is a metal component that is configured to be used for manufacturing a semiconductor device, the metal component including: a substrate having a conductivity; and a noble metal plating layer formed on all or part of a surface of the substrate, wherein the noble metal plating layer has a surface with irregularities, and a protrusion of the irregularities has an aspect ratio of 0.3 or more.

The present invention provides a QFN packaging structure and QFN packaging method. The electromagnetic shielding layer as provided on the outer side of the QFN packaging structure by spacing at a certain interval from the leads may cooperate with the base island having the lug boss on the side edge, such that all surfaces of the chip can be electromagnetically shielded and protected while ensuring the insulation between the electromagnetic shielding layer and the leads.

A Hall-effect sensor package includes and an IC die including a Hall-Effect element and a leadframe including leads on a first side providing a first field generating current (FGC) path including≥1 first FGC input pin coupled by a reduced width first curved head over or under the Hall-effect sensor element to ≥1 first FGC output pin, and second leads on a second side of the package. Some leads on the second side are attached to bond pads on the IC die including the output of the Hall-effect element. A clip is attached at one end to the first FGC input pin and at another end to a location on the first FGC output pin, having a reduced width second curved head in between that is over or under the Hall-effect sensor element opposite the first head.

A semiconductor package formed utilizing multiple etching steps includes a lead frame, a die, and a molding compound. The lead frame includes leads and a die pad. The leads and the die pad are formed from a first conductive material by the multiple etching steps. More specifically, the leads and the die pad of the lead frame are formed by at least three etching steps. The at least three etching steps including a first etching step, a second undercut etching step, and a third backside etching step. The second undercut etching step forming interlocking portions at an end of each lead. The end of the lead is encased in the molding compound. This encasement of the end of the lead with the interlocking portion allows the interlocking portion to mechanically interlock with the molding compound to avoid lead pull out. In addition, by utilizing at least three etching steps the leads can be formed to have a height that is greater than the die pad of the lead frame. This differential in height reduces the span of wires used to form electrical connections within the semiconductor package. These reductions in the span of the wires reduces the chances of wire to wire and wire to die short circuiting because the wire sweep of the wires is reduced when the molding compound is placed.

A leadframe for semiconductor devices, the leadframe comprising a die pad portion having a first planar die-mounting surface and a second planar surface opposed the first surface, the first surface and the second surface having facing peripheral rims jointly defining a peripheral outline of the die pad wherein the die pad comprises at least one package molding compound receiving cavity opening at the periphery of said first planar surface.

Disclosed are a leadframe, a bracket and an LED device. The leadframe includes a first photo-etched metal part, having a first electrode and a chip placement layer thereon, which has a greater length for short and long edges than those of the first electrode; and a second photo-etched metal part, composed of a second electrode and a connection layer thereon, which has a greater length for short and long edges than those of the second electrode; wherein a first long edge of the chip placement layer is flush with a first long edge of the first electrode, and a first long edge of the connection layer is flush with a first long edge of the second electrode; and wherein the chip placement layer and the connection layer are provided with L-shaped pins at corners of their first long edges to cover sidewalls of the corresponding corners.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

In a semiconductor device, a thinly-molded portion covering a whole of a heat dissipating surface portion of a lead frame and a die pad space filled portion are integrally molded from a second mold resin, because of which adhesion between the thinly-molded portion and lead frame improves owing to the die pad space filled portion adhering to a side surface of the lead frame. Also, as the thinly-molded portion is partially thicker owing to the die pad space filled portion, strength of the thinly-molded portion increases, and a deficiency or cracking is unlikely to occur.

A semiconductor device includes a lead frame comprising a first terminal and a second terminal for grounding, a sealing resin which covers the lead frame, an exposed part which is a part of the second terminal and is exposed from the sealing resin and a conductive material which covers the surface of the sealing resin and contacts the second terminal at the exposed part.