A semiconductor package includes a leadframe including leads and a die attach pad (DAP) inside the leads, and at least one semiconductor die having a top side including circuitry electrically connected to bond pads and a bottom side attached to a bottom side portion of the DAP. The package includes a mold compound and a heat slug having a top side and a bottom side positioned within a cavity defined by sidewalls of the mold compound. The heat slug has an area greater than an area of the DAP is attached by its bottom side with a thermally conductive adhesive material to a top side portion of the DAP. Bondwires are between the leads and the bond pads. Exposed from the mold compound is a bottom side surfaces of the leads and the top side of the heat slug.

A leadframe having extensions around an outer edge of a die pad are disclosed. More specifically, leadframes are created with a flange formed at the outer edge of the die pad and extending away from the die pad. The flange is bent, such that it is positioned at an angle with respect to the die pad. Leadframes are also created with anchoring posts formed adjacent the outer edge of the die pad and extending away from the die pad. The anchoring posts have a central thickness that is less than a thickness of first and second portions opposite the central portion. When the leadframe is incorporated into a package, molding compound completely surrounds each flange or anchoring post, which increases the bond strength between the leadframe and the molding compound due to increased contact area. The net result is a reduced possibility of delamination at edges of the die pad.

An electronic device (e.g., integrated circuit) and method of making the electronic device is provided that reduces a strength of an electric field generated outside a package of the electronic device proximate to the low voltage lead pins. The electronic device includes a low voltage side and a high voltage side. The low voltage side includes a low voltage die attached to a low voltage die attach pad. Similarly, the high voltage side includes a high voltage die attached to a high voltage die attach pad. Lead pins are attached to each of the low and high voltage attach pads and extend out from a package of the electronic device in an inverted direction.

A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness.

Disclosed is a device including a first finger of a plurality of lead fingers of a lead frame connected to a first flag. A second finger of the plurality of lead fingers of the lead frame is connected to a second flag. A semiconductor die is coupled to the lead frame. An encapsulant covers the semiconductor die, the lead frame, and a first end of the plurality of lead fingers, and excludes the first flag and the second flag. The first flag and the second flag are separated and electrically isolated from one another by the encapsulant.

In one example, a semiconductor device includes a substrate having leads that include lead terminals, lead steps, and lead offsets extending between the lead steps so that at least some lead steps reside on different planes. A first electronic component is coupled to a first lead step side and includes a first electronic component first side, and a first electronic component second side opposite to the first electronic component first side. A second electronic component is coupled to a second lead step side, and includes a second electronic component first side, and a second electronic component second side opposite to the second electronic component first side. An encapsulant encapsulates the first electronic component, the second electronic component, and portions of the substrate. The lead terminals are exposed from a first side of the encapsulant. Other examples and related methods are also disclosed herein.

A lead frame includes a support portion that has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, a lead, and a heat sink that is welded to the support portion in the second part. A method of manufacturing the lead frame includes forming, from a metal plate, a frame member that includes a support portion and a lead, where the support portion has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, and welding a heat sink to the support portion in the second part.

Methods, systems, and apparatuses for a power card for use in a vehicle. The power card includes an N lead frame, a P lead frame, and an O lead frame each having a body portion and a terminal portion. The O lead frame is located between the N lead frame and the P lead frame. The power card includes a first power device located between the N lead frame and the O lead frame, with a first side coupled to the body portion of the N lead frame and a second side coupled to the body portion of the O lead frame. The power card includes a second power device located between the O lead frame and the P lead frame, with a first side coupled to the body portion of the O lead frame and a second side coupled to the body portion of the P lead frame.

An integrated circuit package is formed by positioning an integrated circuit die on a die pad of a leadframe; connecting a bond wire between the die and a bond pad of the leadframe; encapsulating the bond wire, die, and bond pad with an encapsulant material to form a first mold cap of the integrated circuit package; after the encapsulating, bending one or more leads of the leadframe to form one or more bent leads; and encapsulating the first mold cap and a portion of a bend of the one or more bent leads with the encapsulant material to form a second mold cap.

In one example, a semiconductor device comprises a substrate and an electronic device on a top side of the substrate, a lead frame on the top side of the substrate over the electronic device, wherein the lead frame comprises a connection bar and a lead, a component mounted to the connection bar and the lead on a top side of the lead frame, and an encapsulant on the top side of the substrate, wherein the encapsulant contacts a side of the electronic device and a side of the component. Other examples and related methods are also disclosed herein.