Provided is an electronic component including a pad region including a plurality of pads extending along corresponding extension lines and arranged in a first direction, and a signal wire configured to receive a driving signal from the pad region, wherein the plurality of pads include a plurality of first pads arranged continuously and a plurality of second pads arranged continuously, and extension lines of the plurality of first pads substantially converge into a first point and extension lines of the plurality of second pads substantially converge into a second point different from the first point.

In a described example, an apparatus includes: a first package substrate having a die mount surface; a semiconductor die flip chip mounted to the first package substrate on the die mount surface, the semiconductor die having post connects having proximate ends on bond pads on an active surface of the semiconductor die, and extending to distal ends away from the semiconductor die having solder bumps, wherein the solder bumps form solder joints to the package substrate; a second package substrate having a thermal pad positioned with the thermal pad over a backside surface of the semiconductor die, the thermal pad comprising a thermally conductive material; and a mold compound covering a portion of the first package substrate, a portion of the second package substrate, the semiconductor die, and the post connects, thermal pad having a surface exposed from the mold compound.

The invention relates to a foil-based package with at least one foil substrate having an electrically conductive layer arranged thereon which is patterned to provide a first electrically conducting portion and a second electrically conducting portion, which is coplanar to the first electrically conducting portion, and a third electrically conducting portion, which is coplanar to the first electrically conducting portion, the first electrically conducting portion being arranged between the second and third electrically conducting portions. In accordance with the invention, the first electrically conducting portion is implemented to be a signal-guiding waveguide for high-frequency signals and the second electrically conducting portion, which is coplanar to the first electrically conducting portion, and the third electrically conducting portion, which is coplanar to the first electrically conducting portion, form an equipotential surface.

In a described example, an apparatus includes: a package substrate having a die mount surface; semiconductor die flip chip mounted to the package substrate on the die mount surface, the semiconductor die having post connects having proximate ends on bond pads on an active surface of the semiconductor die, and extending to distal ends away from the active surface of the semiconductor die and connected to the package substrate by solder joints; a thermal interposer comprising a thermally conductive material positioned over and in thermal contact with a backside surface of the semiconductor die; and mold compound covering a portion of the package substrate, a portion of the thermal interposer, the semiconductor die, and the post connects, the thermal interposer having a surface exposed from the mold compound.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a substrate, a semiconductor device, an encapsulant, a balance structure, and a warpage-resistant layer. The semiconductor device is disposed on the substrate. The encapsulant encapsulates the semiconductor device. The balance structure is on the semiconductor device and contacting the encapsulant. The warpage-resistant layer is between the semiconductor device and the balance structure. The encapsulant contacts a lateral surface of the warpage-resistant layer.

A semiconductor die includes a substrate and an integrated circuit provided on the substrate and having contacts. An electrically conductive layer is provided on the integrated circuit and defines electrically conductive elements electrically connected to the contacts. Electrically conductive interconnects coupled with respective electrically conductive elements. The electrically conductive interconnects have at least one of different sizes or shapes from one another.

A semiconductor device includes a conductor, a semiconductor element, and a bonding layer. The conductor has obverse surfaces and reverse surfaces facing away from each other in a thickness direction. The semiconductor element has a body layer and electrodes projecting toward the obverse surfaces from a side of the body layer that opposes the obverse surfaces in the thickness direction. The bonding layer bonds the obverse surfaces and the electrodes. Each electrode has a base portion in contact with the body layer and a columnar portion projecting from the base portion and in contact with the bonding layer. The electrodes include a first electrode and a second electrode located closer to the periphery of the body layer than is the first electrode as viewed in the thickness direction. The second electrode is larger in area of the columnar portion than the first electrode, as viewed in the thickness direction.

This disclosure relates to a method of forming a wafer level chip scale semiconductor package, the method comprising: providing a carrier having a cavity formed therein; forming electrical contacts at a base portion and sidewalls portions of the cavity; placing a semiconductor die in the base of the cavity; connecting bond pads of the semiconductor die to the electrical contacts; encapsulating the semiconductor die; and removing the carrier to expose the electrical contacts, such that the electrical contacts are arranged directly on the encapsulation material.

A molded interconnect device adapted to form a three-dimensional circuit by using laser beams includes: a main body on which the three-dimensional circuit is formed; and a lead portion connected to an external electrode of an external substrate by solder and extending from the main body. The lead portion includes: a lead main body molded from a material same as a material of the main body; and a metal film formed on at least a part of an outer periphery of the lead main body.

A chip-on-film (COF) package includes a film, a driver integrated circuit (IC) chip disposed on the film, an electrode pad disposed on an edge of the film, and a first deformation-preventing member disposed on the film, between the driver IC chip and the electrode pad.