The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.

A semiconductor package comprises a leadframe, a component module, and a semiconductor die. The leadframe has a plurality of insertion terminals, a split die pad, and one or more leads. The component module has one or more passive components mounted on a substrate. The semiconductor die has an integrated circuit. The component module is mounted on a split die pad at a first surface of the leadframe and forms an electrical connection with the insertion terminals. Further, the semiconductor die is mounted on the split die pad at a second surface of the leadframe which is opposite to the first surface.

A method of manufacturing a packaged semiconductor device is provided. The method includes affixing a sensor system to a die pad portion of a leadframe. A battery is affixed to the lead frame including a first terminal of the battery affixed to a first leg of the leadframe and a second terminal of the battery affixed to a second leg of the leadframe. An encapsulant encapsulates the sensor system, battery, and leadframe.

An energy storage device for an integrated circuit carrier package. One or more energy storage elements have contact elements arranged thereon that include an anode, a cathode, and an isolated common pad. The energy storage element is configured for arrangement in a stack of energy storage elements in which the isolated common pad is shorted to one of the anode or the cathode by bonded conductive interconnects.

An energy storage device for an integrated circuit carrier package. One or more energy storage elements have contact elements arranged thereon that include an anode, a cathode, and an isolated common pad. The energy storage element is configured for arrangement in a stack of energy storage elements in which the isolated common pad is shorted to one of the anode or the cathode by bonded conductive interconnects.

An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.

A method of manufacturing a semiconductor device with an attached battery is provided. The method includes affixing a semiconductor die to a die pad region of a first battery lead of a leadframe. The first battery lead of the leadframe is separated from a second battery lead of the leadframe. An encapsulant encapsulates the semiconductor die and portions of the first and second battery leads of the leadframe. The battery is affixed to an exposed portion of the first battery lead of the leadframe such that a first terminal of the battery is conductively connected to the first battery lead. An exposed portion of the second battery lead of the leadframe is bent to overlap a top surface portion of the battery such that a second terminal of the battery conductively connected to the second battery lead.

An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.

A battery pack includes a battery protection circuit module package coupled with a holder. The protection circuit module includes a basic package including a lead frame having a plurality of leads spaced apart from each other, and protection circuit elements provided on the lead frame, and an encapsulant and a holder simultaneously produced by disposing the basic package in a first injection mold and injecting a resin melt into the first injection mold to perform an insert injection molding process. The encapsulant encapsulates the protection circuit elements to expose parts of the lead frame, wherein the encapsulant and the basic package configure the battery protection circuit module package, and wherein the holder is coupled to the battery protection circuit module package due to the insert injection molding process.

An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.