A method of forming a semiconductor device can comprise providing a first shift region in which to determine a first displacement. A second shift region may be provided in which to determine a second displacement. A unique electrically conductive structure may be formed comprising traces to account for the first displacement and the second displacement. The electrically conductive structure may comprise traces comprising a first portion within the first shift region and a second portion of traces in the second shift region laterally offset from the first portion of traces. A third portion of the traces may be provided in the routing area between the first shift region and the second shift region. A unique variable metal fill may be formed within the fill area. The variable metal fill may be electrically isolated from the unique electrically conductive structure.

A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric layer disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure, wherein the interconnect structure laterally connects to at least one edge of the 2D conductive structure.

A semiconductor structure includes a substrate, a via, a conductive pillar, and a core layer. The via is located in the substrate. The conductive pillar is located in the via, and the conductive pillar is provided with a groove extended inwards from an upper surface of the conductive pillar. The core layer is located in the groove, a Young modulus of the core layer is less than that of the conductive pillar.

The present disclosure provides a semiconductor device with void-free contacts and a method for preparing the semiconductor device. The semiconductor device includes a source/drain structure disposed over a semiconductor substrate, a dielectric layer disposed over the source/drain structure, and a conductive contact penetrating through the dielectric layer and the source/drain structure, wherein the conductive contact comprises a conductive layer and a barrier layer covering a sidewall and a bottom surface of the conductive layer. A first thickness of the harrier layer on the sidewall of the conductive layer is less than a second thickness of the barrier layer under the bottom surface of the conductive layer.

Described herein are devices and methods that utilize three-dimensional topological semimetals (including Dirac, Weyl and nodal line) that may be useful in advanced electronic devices. The Fermi level in three dimensional topological semimetals can be significantly shifted in energy when forming a heterojunction with a semiconductor or metal. This has unintended and sometimes negative consequences for device performance. Described herein are designs and methods to modify the heterostructures to either suppress Fermi level movement or to produce an intentional shift to allow for the use of these improved semimetal devices.

The present application discloses a semiconductor device with a programmable unit and a method for fabricating the semiconductor device. The semiconductor device including a substrate, a bottom conductive layer positioned in the substrate, a first gate structure including a first gate dielectric layer positioned on the bottom conductive layer, a first work function layer positioned on the first gate dielectric layer, and a first filler layer positioned on the first work function layer, a second gate structure including a second gate dielectric layer positioned on the bottom conductive layer and spaced apart from the first gate dielectric layer, a second work function layer positioned on the second gate dielectric layer, and a second filler layer positioned on the second work function layer, a conductive plug electrically coupled to the bottom conductive layer, and a top conductive layer electrically coupled to the first gate structure and the second gate structure.

The present application provides a method for fabricating a semiconductor device including providing a substrate, concurrently forming a first conductive line and a bottom contact on the substrate, concurrently forming a first conductive line spacer on a sidewall of the first conductive line and a bottom contact spacer on a sidewall of the bottom contact, forming a first insulating layer over the substrate and concurrently forming an air gap between the first conductive line spacer and the bottom contact spacer.

Various embodiments of the present application are directed towards an integrated memory chip comprising a memory array with a strap-cell architecture that reduces the number of distinct strap-cell types and that reduces strap-line density. In some embodiments, the memory array is limited to three distinct types of strap cells: a source line/erase gate (SLEG) strap cell; a control gate/word line (CGWL) strap cell; and a word-line strap cell. The small number of distinct strap-cell types simplifies design of the memory array and further simplifies design of a corresponding interconnect structure. Further, in some embodiments, the three distinct strap-cell types electrically couple word lines, erase gates, and control gates to corresponding strap lines in different metallization layers of an interconnect structure. By spreading the strap lines amongst different metallization layers, strap-line density is reduced.

Embodiments provide a method for fabricating a semiconductor structure and a semiconductor structure. The method for fabricating a semiconductor structure provided by the present disclosure includes: providing a substrate, the substrate being provided with first trenches arranged in a same direction; forming protective layers on side walls of the first trenches; forming second trenches at bottoms of the first trenches, the second trenches being wider than the first trenches; forming first spacers on side walls of the second trenches to reduce opening sizes of the second trenches; filling the first trenches and the second trenches to form second spacers, and forming voids in the second trenches; forming third trenches in the substrate, the third trenches being perpendicular to the first trenches; and forming bit lines in the third trenches.

The present disclosure provides a semiconductor device with void-free contacts and a method for preparing the semiconductor device. The semiconductor device includes a source/drain structure disposed over a semiconductor substrate, a dielectric layer disposed over the source/drain structure, and a conductive contact penetrating through the dielectric layer and the source/drain structure, wherein the conductive contact comprises a conductive layer and a barrier layer covering a sidewall and a bottom surface of the conductive layer. A first thickness of the barrier layer on the sidewall of the conductive layer is less than a second thickness of the barrier layer under the bottom surface of the conductive layer.