A multi-chip unit suitable for chip-level packaging may include multiple IC chips that are interconnected through a metal redistribution structure, and that are directly bonded to an integrated heat spreader. Bonding of the integrated heat spreader to the multiple IC chips may be direct so that no thermal interface material (TIM) is needed, resulting in a reduced bond line thickness (BLT) and lower thermal resistance. The integrated heat spreader may further serve as a structural member of the multi-chip unit, allowing a second side of the redistribution structure to be further interconnected to a host by solder interconnects. The redistribution structure may be fabricated on a sacrificial interposer that may facilitate planarizing IC chips of differing thickness prior to bonding the heat spreader. The sacrificial interposer may be removed to expose the RDL for further interconnection to a substrate without the use of through-substrate vias.

An electronic package includes a patterned conductive layer and at least one conductive protrusion on the patterned conductive layer. The at least one conductive protrusion has a first top surface. The patterned conductive layer and the at least one conductive protrusion define a space. The electronic package further includes a first electronic component disposed in the space and a plurality of conductive pillars on the first electronic component. The conductive pillars have a second top surface. The first top surface is substantially level with the second top surface.

An electronic circuit device according to the present invention includes a base substrate including a wiring layer having a connection part, at least one electronic circuit element, and a re-distribution layer including a photosensitive resin layer, the photosensitive resin layer enclosing a surface on which a connection part of the electronic circuit element is formed and a side surface of the electronic circuit element and embedding a first wiring photo via, a second wiring photo via and a wiring, the first wiring photo via directly connected to the connection part of the electronic circuit element, the second wiring photo via arranged at the outer periphery of the electronic circuit element and directly connected to a connection part of the wiring layer, the wiring electrically connected to the first wiring photo via and the second wiring photo via on a same surface.

A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.

A semiconductor package includes a chip level unit including a semiconductor chip; a medium level unit; and a solder ball unit. The solder ball unit is to be connected to a circuit substrate. The medium level unit includes: a wiring pad layer on a first protection layer; a second protection layer including a pad-exposing hole on the first protection layer, a post layer in the pad-exposing hole on the wiring pad layer; and a third protection layer including a post-exposing hole on the second protection layer. A width or diameter of the post-exposing hole is smaller than a width or diameter of the pad-exposing hole; and a barrier layer is disposed in the post-exposing hole on the post layer. The solder ball unit includes a solder ball on the barrier layer.

A method of forming a semiconductor device includes attaching a semiconductor die to a flag of a leadframe and forming a conductive connector over a portion of the semiconductor die and a portion of the flag. A conductive connection between a first bond pad of the semiconductor die and the flag is formed by way of the conductive connector. A second bond pad of the semiconductor die is connected to a conductive lead of the plurality by way of a bond wire.

A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.

Disclosed is a microelectronic device assembly comprising a substrate having conductors exposed on a surface thereof. Two or more microelectronic devices are stacked on the substrate and the components are connected with conductive material in preformed holes in dielectric material in the bond lines aligned with TSVs of the devices and the exposed conductors of the substrate. Methods of fabrication are also disclosed.

A display device includes a substrate including a display area in which pixels are located, and a non-display area, first and second electrodes in the display area and spaced from each other, light emitting elements between the first and second electrodes, connection electrodes electrically connected to the light emitting elements, a fan-out line electrically connected to the pixels in the non-display area, a first pad electrode on the fan-out line, a pad connection electrode on the fan-out line and the first pad electrode, and electrically connecting the fan-out line and the first pad electrode, and a second pad electrode at a same layer as at least one of the connection electrodes, and contacting the first pad electrode.

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.