A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

A semiconductor apparatus includes: a base plate; an insulating circuit board including a ceramic substrate, a circuit pattern formed on an upper surface of the ceramic substrate, a metal layer formed on a lower surface of the ceramic substrate and fixed on an upper surface of the base plate with a first joint material; a semiconductor device having a first surface fixed on the circuit pattern with a second joint material and a second surface which is an opposite surface of the first surface; a lead frame fixed on the second surface with a third joint material; and a case fixed to an outer edge portion of the base plate and enclosing the semiconductor device, wherein restoring force acts on the insulating circuit board in a direction of warpage that is convex upward, and restoring force acts on the base plate in a direction of warpage that is convex downward.

A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate. The metallic contact has a contact surface to make electrical contact with a trace through a dielectric layer over the semiconductor circuit substrate and the metallic contact. The semiconductor circuit can include a trace that connects the contact to a package pad to enable external access to the signal from off the semiconductor circuit. The metallic contact includes a vertical lip extending vertically into the dielectric layer above the contact surface.

A semiconductor arrangement includes a semiconductor substrate having a dielectric insulation layer and at least a first metallization layer arranged on a first side of the dielectric insulation layer. The first metallization layer includes at least two sections, each section being separated from a neighboring section by a recess. A semiconductor body is arranged on one of the sections of the first metallization layer. At least one indentation is arranged between a first side of the semiconductor body and a closest edge of the respective section of the first metallization layer. A distance between the first side and the closest edge of the section of the first metallization layer is between 0.5 mm and 5 mm.

The present disclosure is directed to a high throughput clip bonding tool or system which is flexible and easily adapts to different clip bond pitches or sizes. The clip bonding system may be an integrated system with various modules, including a clip singulation module, a feeder module, a transfer module and a clip attach module within a shared footprint. For example, an incoming clip source may be fed to the clip singulation module for clip singulation before the singulated clips are transferred by the feeder and transfer modules to a clip presentation area for clip alignment before pickup. A pickup tool of the clip attach module is configured to facilitate pickup and attachment of clips onto the semiconductor packages to be clip bonded. For example, the pickup head is programmable to facilitate clip bonding process of different applications which may require clips and packages with different sizes.

An electronic heat-dissipating substrate including: lead frames of wiring pattern shapes on a conductor plate; and an insulating member between the lead frames. A plate surface of the lead frames and a top surface of the insulating member form one continuous surface. The part arrangement surface is on both surfaces of the electronic part mounting heat-dissipating substrate, a reductant circuit which includes at least similar dual-system circuit is formed on the electronic part mounting heat-dissipating substrate, a first-system circuit of the dual-system circuit is formed on a first surface of the electronic part mounting heat-dissipating substrate, a second-system circuit of the dual-system circuit is formed on a second surface of the electronic part mounting heat-dissipating substrate, and the common lead frames used in a portion of a circuit wiring are used to the first surface and the second surface of the electronic part mounting heat-dissipating substrate.

A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.