A method of fabricating a bridged multi-chip assembly structure includes providing a carrier substrate. The method further includes arranging a plurality of chips on the carrier substrate in a predetermined layout. Each chip has a front surface including a set of terminals formed thereon. The method further includes depositing a molding material between the plurality of chips and on the carrier substrate. The method further includes removing the carrier substrate from the plurality of chips fixed by the molding material. The method further includes bonding a bridge chip to corresponding sets of terminals of at least two chips of the plurality of chips fixed by the molding material.

The present application relates to a chip removal head, a chip removal system and a chip removal method. The chip removal head has a heating portion (14) and an attractive force guide portion, wherein the heating portion (14) includes a bottom surface (141) and a top surface (142), which are opposite to each other, and the bottom surface (141) is a surface in contact with a to-be-removed chip; the heating portion (14) is connected to an external power supply, and generates a dissociation heat under the action of the external power supply, so as to release a connection between the to-be-removed chip and an external substrate; and the attractive force guide portion is configured to guide the to-be-removed chip, for which the connection has been released, to be adsorbed on the bottom surface (141) of the heating portion (14).

A method is provided. The method includes one or more of extracting a die from an original packaged integrated circuit, modifying the extracted die, reconditioning the modified extracted die, placing the reconditioned die into a cavity of a hermetic package base, bonding a plurality of bond wires between reconditioned die pads of the reconditioned die to leads of the hermetic package base or downbonds to create an assembled hermetic package base, and sealing a hermetic package lid to the assembled hermetic package base to create a new packaged integrated circuit. Modifying the extracted die includes removing the one or more ball bonds on the one or more die pads. Reconditioning the modified extracted die includes adding a sequence of metallic layers to bare die pads of the modified extracted die. The extracted die is a fully functional semiconductor die with one or more ball bonds on one or more die pads of the extracted die.

Multiple wide bandgap semiconductor wafers, each having active circuitry and an epitaxially formed backside drain contact layer, may be constructed from a single bulk semiconductor substrate by: forming foundational layers on the top of the bulk substrate via epitaxy; forming active circuitry atop the foundational layers; laser treating the backside of the bulk substrate to create a cleave line in one of the foundational layers; and exfoliating a semiconductor wafer from the bulk substrate, where the exfoliated semiconductor wafer contains the active circuits and at least a portion of the foundational layers. Wafers containing the foundational layers without complete active devices may be produced in a similar manner. The foundational layers may comprise a drain contact layer and a drift layer, and may additionally include a buffer layer between the drain contact layer and the drift layer.

Manufacturing a handle substrate includes: providing a support substrate having a receiving face; depositing an anti-adherent formulation including a first solvent over the receiving face of the support substrate so as to form a film; depositing a liquid formulation over a face of the film, before the complete evaporation of the first solvent, the liquid formulation being intended to form an adhesive layer; and evaporating the first solvent so as to obtain an anti-adherent film from the film in order to obtain the handle substrate and to obtain a bonding energy between the anti-adherent film and the adhesive layer lower than about 1.2 J/m.sup.2. The step of depositing of a liquid formulation is carried out when the face of the film has a water drop angle smaller than 65 degrees, so as to avoid any risk of dewetting of the liquid formulation.

Provided is an electronic device including a plurality of substrate electrodes on a substrate, the substrate electrodes including initial electrodes and spare electrodes, a bonding material covering the initial electrodes and the spare electrodes, module structures respectively provided on first initial electrodes of the initial electrodes, and solders between each of the first initial electrodes and each of the module structures, wherein the spare electrodes include second spare electrodes, wherein the module structures are not provided on the second spare electrodes, wherein the bonding material on the first initial electrodes is harder than the bonding material on the second spare electrodes.

Provided is a multi-beam laser debonding apparatus for debonding an electronic component from a substrate, the apparatus including: a first laser module to emit a first laser beam to a predetermined range of a first substrate area including attachment positions of a debonding target electronic component and a neighboring electronic component to thereby heat a solder of the electronic components to reach a predetermined pre-heat temperature; and a second laser module to emit a second laser beam overlapping the first laser beam to a second substrate area smaller than the first substrate area, the second substrate area including the attachment position of the debonding target electronic component to thereby heat the solder of the debonding target electronic component to reach a debonding temperature at which the solder commences melting.

The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.

A transfer printing method and a transfer printing apparatus. The transfer method includes: transferring a plurality of devices formed on an original substrate to a transfer substrate; obtaining first position information of positions of the plurality of devices on the transfer substrate; obtaining second position information of corresponding positions, on a target substrate, of devices to be transferred; comparing the first position information with the second position information to obtain first target position information recording a first transfer position; and aligning the transfer substrate with the target substrate and performing a site-designated laser irradiation on at least part of devices on the transfer substrate corresponding to the first transfer position, simultaneously, according to the first target position information, so as to transfer the at least part of the devices from the transfer substrate to the target substrate.

A removal module for removing a mis-assembled semiconductor light emitting diode includes a housing having an inner space formed by an upper plate having a nozzle hole and a lower plate spaced apart from the upper plate; a fluid supply part configured to supply a fluid outside the housing to the inner space; and a fluid control part configured to control spray of the fluid supplied to the inner space through the nozzle hole by adjusting a pressure of the inner space.