A method for manufacturing a fin-integrated semiconductor module includes: clamping a fin-integrated heat-dissipation base using a level different jig while making the heat-dissipation base vary in height; and soldering a semiconductor assembly onto the heat-dissipation base. A semiconductor module includes a fin-integrated heat-dissipation base and a semiconductor assembly provided on the heat-dissipation base. A bending width of the heat-dissipation base is 200 μm or less.

An object of the present disclosure is to provide a trench gate type power semiconductor device that does not easily break even when stress is applied. A SiC-MOSFET includes a SiC substrate, a drift layer of a first conductive type, formed on the SiC substrate, a base region of a second conductivity type formed in a surface layer of the drift layer, a source region of the first conductivity type selectively formed in a surface layer of the base region, a trench extending through the base region and the source region and reaching the drift layer, a gate electrode embedded in the trench and having a V-shaped groove on an upper surface thereof, and an oxide film formed on an upper surface including the groove of the gate electrode, in which a bottom of the V-shape groove is deeper than the base region.

A metal base plate is rectangular in plan view, has a joining region set on a front surface, and has a center line, which is parallel to a pair of short sides that face each other, set in a middle interposed between the pair of short sides. A ceramic circuit board includes a ceramic board that is rectangular in plan view, a circuit pattern that is formed on a front surface of the ceramic board and has a semiconductor chip joined thereto, and a metal plate that is formed on a rear surface of the ceramic board and is joined to the joining region by solder. Here, the solder contains voids and is provided with a stress relieving region at one edge portion that is away from the center line. A density of voids included in the stress relieving region is higher than other regions of the solder.

A transistor includes a wide bandgap semiconductor layer, a gate electrode, a gate pad, and a gate runner. The gate electrode extends to a region where the gate pad is located and a region where the gate runner is located. The gate pad is connected to the gate electrode. The gate runner is connected to the gate electrode. The gate electrode includes a first region connected to the gate pad, a second region connected to the gate runner, and a third region and a fourth region arranged between the first and second regions in different positions in a first direction. In a cross section perpendicular to the first direction, the gate electrode in the fourth region has a cross-sectional area smaller than that of the gate electrode in the third region.

A circuit module includes a substrate with a patterned metal surface. The patterned metal surface includes a conductive terminal pad, a first conductive pad, and a second conductive pad that is non-adjacent to the conductive terminal pad. A first circuit portion is assembled on the first conductive pad and a second circuit portion is assembled on the second conductive pad. A conductive bridge electrically couples the conductive terminal pad and the second conductive pad. The conductive bridge includes an elevated span extending above and across the first conductive pad.

A method for forming a stacked transistor includes forming a sacrificial cap over a first interconnect of a lower level transistor. The method further includes forming an upper level transistor above the sacrificial cap. The method further includes removing the sacrificial cap to form an opening such that the opening is delimited by the upper level transistor. The method further includes forming a second interconnect in the opening such that the second interconnect is in direct contact with the first interconnect.

A semiconductor module includes at least two semiconductor elements connected in parallel; a control circuit board placed between the at least two semiconductor elements; a control terminal for external connection; a first wiring member that connects the control terminal and the control circuit board; and a second wiring member that connects a control electrode of one of the at least two semiconductor elements and the control circuit board, wherein the second wiring member is wire-bonded from the control electrode towards the control circuit board, and has a first end on the control electrode and a second end on the control circuit board, the first end having a cut end face facing upward normal to a surface of the control electrode and the second end having a cut end face facing sideways parallel to a surface of the control circuit board.

A semiconductor module includes a semiconductor device, and a cooling device. The semiconductor device includes a semiconductor chip and a circuit board for mounting the chip. The cooling device includes a top plate mounted in the semiconductor device and having a side wall connected thereto, a bottom plate connected to the side wall, and a refrigerant circulating portion, defined by the top plate, the side wall, and the bottom plate and has a substantially rectangular shape with a cross section parallel to a main surface of the top plate having long and short sides. The circuit board is a substantially rectangular laminated circuit board including an insulating plate having an upper surface with a circuit layer and a lower surface with a metal layer. In a plan view, at least one corner of the metal layer at least partially overlaps with the slope portion of the side wall.

A substrate module according to an embodiment of the present invention comprises: a first substrate which includes transformer connection part to be connected to terminals of a transformer, at least one second substrate on which a switch module to be connected to the transformer is formed; and a conductive connector which connects the first substrate and the second substrate to each other, wherein the first substrate and the second substrate are arranged by the conductive connector such that a predetermined angle is formed therebetween.

Microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a packaged microelectronic device can include an interposer substrate with a plurality of interposer contacts. A microelectronic die is attached and electrically coupled to the interposer substrate. The device further includes a casing covering the die and at least a portion of the interposer substrate. A plurality of electrically conductive through-casing interconnects are in contact with and projecting from corresponding interposer contacts at a first side of the interposer substrate. The through-casing interconnects extend through the thickness of the casing to a terminus at the top of the casing. The through-casing interconnects comprise a plurality of filaments attached to and projecting away from the interposer contacts in a direction generally normal to the first side of the interposer substrate.