H01L25/115

LIGHT SOURCE DEVICE
20180006000 · 2018-01-04 · ·

A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

POWER MODULE HAVING AT LEAST THREE POWER UNITS

A power module includes at least two power units. Each power unit includes at least one power semiconductor and a substrate. In order to reduce the installation space required for the power module and to improve cooling, the at least one power semiconductor is connected, in particular in a materially bonded manner, to the substrate. The substrates of the at least two power units are each directly connected in a materially bonded manner to a surface of a common heat sink. A power converter having at least one power module is also disclosed.

High electric-thermal performance and high-power density power module
11569815 · 2023-01-31 ·

A rectangular power module with a body having two short ends defining a length and two long sides defining a width having three parallel circuit paths crossing the short width distance from side to side using side positioned gate terminals and planar top positioned top power terminal positioned between MOSFETS in the circuit for even thermal positioning and reduced current path, inductance, and resistance and increased power density.

POWER CONVERTER

A power converter includes a PCB having opposing first and second sides, and a plurality of first commutation units and first capacitor unit disposed on the PCB. Each first commutation unit includes a first discrete component and a second discrete component. The second end of the first discrete component is electrically coupled to the first end of the second discrete component, and the first capacitor unit is electrically coupled to the first ends of the first discrete components and the second ends of the second discrete components in the plurality of first commutation units, respectively. The first discrete components and the second discrete components in the plurality of first commutation units are arranged in a row. The first discrete component and the second discrete component in each first commutation unit form a commutation loop together with the first capacitor unit.

POLYIMIDE BONDED BUS BAR FOR POWER DEVICE
20230005822 · 2023-01-05 ·

Disclosed is a semiconductor article including: a metal bus bar and a metal heat sink wherein at least a portion of a first side of the metal bus bar is bonded to at least a portion of the metal heat sink by a polyimide layer without adhesive; and a semiconductor power device disposed on a second side of the metal bus bar.

Semiconductor component having through-silicon vias

A semiconductor component includes a substrate having an opening. The semiconductor component further includes a first dielectric liner in the opening, wherein the first dielectric liner having a thickness T.sub.1 at a first end of the opening, and a thickness T.sub.2 at a second end of the opening, and R.sub.1 is a ratio of T.sub.1 to T.sub.2. The semiconductor component further includes a second dielectric liner over the first dielectric liner, wherein the second dielectric liner having a thickness T.sub.3 at the first end of the opening, a thickness T.sub.4 at the second end of the opening, R.sub.2 is a ratio of T.sub.3 to T.sub.4, and R.sub.1 is greater than R.sub.2.

HEAT TRANSFER MEMBER-EQUIPPED SUBSTRATE AND METHOD FOR MANUFACTURING HEAT TRANSFER MEMBER-EQUIPPED SUBSTATE
20220408545 · 2022-12-22 ·

A heat transfer member-equipped substrate includes a heat transfer member installed in a through hole of a substrate; a heat generating component; and a solder portion soldering the heat generating component to the heat transfer member, a nickel base plating formed on the heat transfer member, and the solder portion bonded to the nickel base plating where a gold plating that suppresses oxidization of the nickel base plating is blended into the solder portion. The heat transfer member includes a first and a second heat transfer portion bonded to each other, the first heat transfer portion made of a first metal, the second heat transfer portion made of a second metal formed on at least a portion of a surface of the second heat transfer portion, and the second heat transfer portion being a plate shape that protrudes from a circumference of the first heat transfer portion.

Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold
11532537 · 2022-12-20 · ·

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

SEMICONDUCTOR DEVICE, PRINTED CIRCUIT BOARD (PCB), AND METHOD OF INTERFACING CONTROL PIN (GATE PIN) OF A POWER SEMICONDUCTOR DEVICE (MOSFET) TO A PRINTED CIRCUIT BOARD (PCB) IN A BATTERY MANAGEMENT SYSTEM (BMS)
20220399256 · 2022-12-15 · ·

Provided is a MOSFET device for use with a printed circuit board (PCB) of a battery management system (BMS), the device including a semiconductor body; a metal conductor extending outwardly from a side of the semiconductor body; a plurality of power pins extending outwardly from at least one side of the semiconductor body, the power pins having tips bent downwardly; a gate pin extending outwardly from at least one side of the semiconductor body, wherein the tip of the gate pin is raised or elevated relative to the tips of the power pins so as to avoid electrical contact with the one of the spaced apart copper plates, and wherein the tip of the gate pin is connected to a circuit of the battery management system (BMS).

COOLING APPARATUS AND SEMICONDUCTOR APPARATUS WITH COOLING APPARATUS
20220377939 · 2022-11-24 · ·

A cooling apparatus includes: a first member including a first surface in contact with a cooling target, a second surface opposite to the first surface, and radiating fins protruding from the second surface; and a second member including a third surface facing the second surface, a refrigerant flows between the first member and the second member, the second member includes a first protrusion protruding from the third surface toward a space, the space existing between the radiating fins in a flow direction of the refrigerant, the first protrusion includes a first slope inclined to the third surface, the first slope includes a first end and a second end, the first end is closer to the second surface than the second end, the second end is closer to the third surface than the first end, the first end is positioned downstream in the flow direction from the second end.