An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection layer.

An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection layer.

An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection layer.

A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures with each other; mounting the semiconductor carrier on a support carrier with the first side of the semiconductor carrier facing the support carrier; thinning the semiconductor carrier from a second side opposite the first side; and removing material of the semiconductor carrier in a separation region between the first and second vertically integrated electronic structures to separate a first semiconductor region of the first vertically integrated electronic structure from a second semiconductor region of the second vertically integrated electronic structure with the first and second vertically integrated electronic structures remaining electrically connected with each other via the electrical connection layer.

An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection layer.

A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures with each other; mounting the semiconductor carrier on a support carrier with the first side of the semiconductor carrier facing the support carrier; thinning the semiconductor carrier from a second side opposite the first side; and removing material of the semiconductor carrier in a separation region between the first and second vertically integrated electronic structures to separate a first semiconductor region of the first vertically integrated electronic structure from a second semiconductor region of the second vertically integrated electronic structure with the first and second vertically integrated electronic structures remaining electrically connected with each other via the electrical connection layer.