A method used in forming an array of memory cells comprises forming a vertical stack comprising transistor material directly above and directly against a first capacitor electrode material. A mask is used to subtractively etch both the transistor material and thereafter the first capacitor electrode material to form a plurality of pillars that individually comprise the transistor material and the first capacitor electrode material. Capacitors are formed that individually comprise the first capacitor electrode material of individual of the pillars. Vertical transistors are formed above the capacitors that individually comprise the transistor material of the individual pillars. Other aspects and embodiments are disclosed, including structure independent of method.

Ferroelectric memory and methods of forming the same are provided. An example memory cell can include a buried recessed access device (BRAD) formed in a substrate and a ferroelectric capacitor formed on the BRAD.

Methods, systems, and devices for preventing disturb of untargeted memory cells during repeated access operations of target memory cells are described for a non-volatile memory array. Multiple memory cells may be in electronic communication with a common conductive line, and each memory cell may have an electrically non-linear selection component. Following an access operation (e.g., a read or write operation) of a target memory cell, untargeted memory cells may be discharged by applying a discharge voltage to the common conductive line. The discharge voltage may, for example, have a polarity opposite to the access voltage. In other examples, a delay may be instituted between access attempts in order to discharge the untargeted memory cells.

A stacked structure includes a ferroelectric layer, and a tunnel barrier layer joined to the ferroelectric layer. The main component of the ferroelectric layer is aluminum nitride, and the main component of the tunnel barrier layer is magnesium oxide.

At least a portion of a memory cell is formed over a first substrate and at least a portion of a steering element or word or bit line of the memory cell is formed over a second substrate. The at least a portion of the memory cell is bonded to at least a portion of a steering element or word or bit line. At least one of the first or second substrate may be removed after the bonding.

Some embodiments include an integrated assembly containing a first structure which includes one or more transition metals, and containing a second structure over the first structure. The second structure has a first region directly against the first structure and has a second region spaced from the first structure by a gap region. The second structure includes semiconductor material having at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Groups 15 and 16 of the periodic table. An ionic compound is within the gap region. Some embodiments include a method of forming an integrated assembly.

An N-bit non-volatile multi-level memory cell (MLC) can include a lower electrode and an upper electrode spaced above the lower electrode. N ferroelectric material layers can be vertically spaced apart from one another between the lower electrode and the upper electrode, wherein N is at least 2 and at least one dielectric material layer having a thickness of less than 20 nm can be located between the N ferroelectric material layers.

Ferroelectric random access memory (FRAM) capacitors and methods of forming FRAM capacitors are provided. An FRAM capacitor may be formed between adjacent metal interconnect layers or between a silicided active layer (e.g., including MOSFET devices) and a first metal interconnect layer. The FRAM capacitor may be formed by a damascene process including forming a tub opening in a dielectric region, forming a cup-shaped bottom electrode, forming a cup-shaped ferroelectric element in an interior opening defined by the cup-shaped bottom electrode, and forming a top electrode in an interior opening defined by the cup-shaped ferroelectric element. The FRAM capacitor may form a component of an FRAM memory cell. For example, an FRAM memory cell may include one FRAM capacitor and one transistor (1T1C configuration) or two FRAM capacitors and two transistor (2T2C configuration).

A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.

A semiconductor device includes: a substrate; a first dielectric layer over the substrate; a memory cell over the substrate in a first region of the semiconductor device, where the memory cell includes a first ferroelectric structure in the first dielectric layer, where the first ferroelectric structure includes a first bottom electrode, a first top electrode, and a first ferroelectric layer in between; and a tunable capacitor over the substrate in a second region of the semiconductor device, where the tunable capacitor includes a second ferroelectric structure, where the second ferroelectric structure includes a second bottom electrode, a second top electrode, and a second ferroelectric layer in between, where at least a portion of the second ferroelectric structure is in the first dielectric layer.