A semiconductor device that has low power consumption and is capable of performing arithmetic operation is provided. The semiconductor device includes first to third circuits and first and second cells. The first cell includes a first transistor, and the second cell includes a second transistor. The first and second transistors operate in a subthreshold region. The first cell is electrically connected to the first circuit, the first cell is electrically connected to the second and third circuits, and the second cell is electrically connected to the second and third circuits. The first cell sets current flowing from the first circuit to the first transistor to a first current, and the second cell sets current flowing from the second circuit to the second transistor to a second current. At this time, a potential corresponding to the second current is input to the first cell. Then, a sensor included in the third circuit supplies a third current to change a potential of the second wiring, whereby the first cell outputs a fourth current corresponding to the first current and the amount of change in the potential.

A semiconductor device with a high on-state current is provided. An oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; an interlayer insulating film positioned to cover the oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the oxide semiconductor film; a barrier insulating film over the oxide semiconductor film; and a gate electrode over the gate insulating film are included. The barrier insulating film is positioned between the source electrode and the gate insulating film and between the drain electrode and the gate electrode. An opening is formed in the interlayer insulating film so as to overlap with a region between the source electrode and the drain electrode. The barrier insulating film, the gate insulating film, and the gate electrode are positioned in the opening of the interlayer insulating film. Above the barrier insulating film, the gate insulating film is in contact with the interlayer insulating film.

The display apparatus includes a substrate including an auxiliary circuit area and an auxiliary display area, an auxiliary pixel circuit on the auxiliary circuit area, an auxiliary display element on the auxiliary display area, and a connection line extending from the auxiliary circuit area to the auxiliary display area and configured to connect the auxiliary pixel circuit to the auxiliary display element. The connection line includes a first sub-line and a second sub-line which are on different layers, and the first sub-line is electrically connected to the second sub-line through a contact portion.

A display panel and a display apparatus are disclosed. The display apparatus includes the display panel and a sensing device. The display panel includes a substrate, a first signal line, and a first dummy conductive pattern. The substrate includes a functional display region, a buffer region, and a general display region. The buffer region is located between the functional display region and the general display region. The first signal line and the first dummy conductive pattern are disposed on the substrate and correspond to the buffer region. The first dummy conductive pattern is overlapped with a part of the first signal line. The sensing device is overlapped with the functional display region.

A display apparatus and a method of manufacturing the same are provided. According to an embodiment, a display apparatus includes: a substrate; a thin-film transistor located on the substrate; and a buffer layer, a conductive layer, and an insulating layer sequentially located from the substrate between the substrate and the thin-film transistor, and a thickness of the insulating layer is less than a thickness of the buffer layer.

A display apparatus includes a substrate, a first data line in a display area, a first input line in a peripheral area, and a first connecting wire electrically connected to the first input line in a peripheral area of the substrate. The first connecting wire transfers a first input signal from the first input line to the first data line. The first connecting wire includes a first connecting line disposed in a display area of the substrate and extending in the first direction, and a second connecting line electrically connected to the first connecting line and extending in a second direction intersecting the first direction. The first connecting line and the second connecting line are disposed on different layers.

A display substrate, a manufacturing method therefor and a pixel driving circuit, the display substrate includes: a base substrate; a first conductive layer, which includes a first signal line, a second signal line, and an additional pad layer, on the base substrate; a pixel defining layer on the first conductive layer and having an opening; and an electroluminescent material layer in the opening and including a first end portion and a second end portion, an orthographic projection of the first end portion on the base substrate falls within that of the first signal line, an orthographic projection of the second end portion on the base substrate falls within that of the additional pad layer, and the orthographic projections of the first end portion and the second end portion are respectively located on both sides of an orthographic projection of the second signal line on the base substrate.

A display device includes a scan line extending in a direction, a data line and a driving voltage line extending in another direction, a transistor electrically connected to the driving voltage line and including a first gate electrode and a first semiconductor layer, a second transistor electrically connected to the scan and data lines and including a second gate electrode and a second semiconductor layer, a first capacitor electrically connected to the first transistor and including first and second capacitor plates, and a second capacitor including a third capacitor plate electrically connected to the first transistor and a fourth capacitor plate electrically connected to the second transistor. The second capacitor plate includes a first hole overlapping the first capacitor plate, the fourth capacitor plate includes a second hole overlapping the third capacitor plate, and a size of the second hole is different from that of the first hole.

A display panel includes a base layer, a signal line which is disposed on the base layer and includes a first layer including aluminum and a second layer disposed directly on the first layer and consisting of niobium, a first thin film transistor connected to the signal line, a second thin film transistor disposed on the base layer, a capacitor electrically connected to the second thin film transistor, and a light emitting element electrically connected to the second thin film transistor.

A pressure sensor element and a receiving circuit are formed on an IC chip. A transmitting circuit and a piezoelectric element of an actuator are respectively formed on a transmitting chip and a piezoelectric chip. The piezoelectric chip and the pressure sensor face each other separated by a distance in an airtight first space surrounded by a package main body and a base substrate. Dielectric breakdown voltage of signal transmission from the primary side to the secondary side is set by the distance. The first space is a pressure propagation region including an insulating medium capable of transmitting vibrations of the piezoelectric element as pressure. The signal transmission is performed with high insulation by the pressure generated in the pressure propagation region between components integrated in a single module by insulating the primary side and the secondary side from each other by the insulating medium of the pressure propagation region.