A mobile terminal according to an embodiment includes a display panel having flexibility, and a support plate configured to support the display panel and to include a curved edge, at least a part of which is surrounded by the display panel. The display panel includes a base substrate, a light-emitting layer provided on the base substrate and configured to include a light-emitting element, a thin-film encapsulation layer configured to seal the light-emitting element, and a thin-film transistor (TFT) film configured to supply a signal to the light-emitting element, a polarizing film provided on the light-emitting layer, and a protective film provided on the polarizing film. The TFT film is extended from the base substrate at the curved edge to cover an edge of the base substrate.

A display device includes: a substrate; an insulating layer on a top surface of the substrate; a plurality of light-emitting diodes on the insulating layer and including two light-emitting diodes spaced apart from each other and having a transmission area therebetween; an encapsulation member covering the plurality of light-emitting diodes; and a rear cover layer located on a rear surface of the substrate and including a first portion located in the transmission area, wherein the first portion includes a transparent material.

A display device includes a display module having a folding area and a non-folding area adjacent to the folding area. A glass substrate is disposed on the display module and comprises a first layer and a second layer disposed on the first layer. The second layer has a compressive strength that is higher than a compressive strength of the first layer. The first layer and the second layer of the glass substrate each include a folding portion overlapping the folding area and having a first thickness and a non-folding portion overlapping the non-folding area and having a second thickness greater than the first thickness. The second layer of the non-folding portion has a thickness that is greater than a thickness of the second layer of the folding portion.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

An image sensing device includes a substrate layer in which an array of photoelectric conversion elements is formed, grid structures disposed over the substrate layer to divide space above the substrate into different sensing regions, each grid structure including an air layer, color filters formed to fill bottom portions of spaces between the grid structures, the color filters having a higher refractive index than the air layer, and a lens layer disposed over the grid structures and the color filters such that part of the lens layer fills top portions of the spaces between the grid structures, the lens layer having a higher refractive index than of the color filters.

An image pickup apparatus includes: an image pickup device that includes a light receiving surface, an opposite surface, a light receiving portion, and external electrodes connected to the light receiving portion; and a wiring board that includes a first main surface, a second man surface, and a wiring portion provided with first bonding electrodes bonded to the external electrodes, wherein the first main surface of the wiring portion is arranged at a first angle θ1 equal to or smaller than 90 degrees relative to the opposite surface, the wiring board includes a reinforced portion and a folded portion bent at the first angle θ1 between the reinforced portion and the wiring portion, and the second main surface of the reinforced portion is fixed to the opposite surface of the image pickup device.

An image pickup apparatus includes: an image pickup device that includes a light receiving surface, an opposite surface, a light receiving portion, and external electrodes connected to the light receiving portion; and a wiring board that includes a first main surface, a second man surface, and a wiring portion provided with first bonding electrodes bonded to the external electrodes, wherein the first main surface of the wiring portion is arranged at a first angle θ1 equal to or smaller than 90 degrees relative to the opposite surface, the wiring board includes a reinforced portion and a folded portion bent at the first angle θ1 between the reinforced portion and the wiring portion, and the second main surface of the reinforced portion is fixed to the opposite surface of the image pickup device.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.