An actuator device has an electroactive polymer actuator (35) and an integrated piezoelectric transformer (30) whose primary side (32) and secondary side (34) are formed from different electroactive polymer materials. At least the secondary side (34) of the transformer shares a piezoelectric electroactive polymer layer (36) with the electroactive polymer actuator, so that lower external voltages can be applied to the device.

An ultrasonic sensor, a preparation method of the ultrasonic sensor, and a display apparatus are provided. The ultrasonic sensor includes a texture recognition region and a contrast region. The contrast region is located on at least one side of the texture recognition region. The texture recognition region includes at least one recognizing unit, and the contrast region includes at least one contrast unit. The at least one recognizing unit includes a first dielectric material layer, and the at least one contrast unit includes a second dielectric material layer. The first dielectric material layer and the second dielectric material layer are made of a same material. The first dielectric material layer exhibits piezoelectric properties. A piezoelectric strain constant of the first dielectric material layer is greater than a piezoelectric strain constant of the second dielectric material layer.

An ultrasonic sensor includes an element substrate having a first and a second surface at an opposite side of the first surface, including an opening section piercing through the element substrate in a Z direction from the first to second surface, a vibrating plate on the first surface of the element substrate to close the opening section, a plurality of vibration regions extending along an X direction orthogonal to the Z direction on the vibration plate in positions overlapping the opening section, and a plurality of piezoelectric elements to correspond to the plurality of vibration regions of the vibration plate. The opening section includes, on the first surface, a first and second side parallel to the X direction and a third and fourth side coupling end portions in the X direction of the first and second sides at an acute or obtuse angle to the first and the second side.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A hybrid quantum system performs high-fidelity quantum state transduction between a superconducting (SC) microwave qubit and the ground state spin system of a solid-state artificial atom. This transduction is mediated via an acoustic bus connected by piezoelectric transducers to the SC microwave qubit. For SC circuit qubits and diamond silicon vacancy centers in an optimized phononic cavity, the system can achieve quantum state transduction with fidelity exceeding 99% at a MHz-scale bandwidth. By combining the complementary strengths of SC circuit quantum computing and artificial atoms, the hybrid quantum system provides high-fidelity qubit gates with long-lived quantum memory, high-fidelity measurement, large qubit number, reconfigurable qubit connectivity, and high-fidelity state and gate teleportation through optical quantum networks.

A piezoelectric sensor and a manufacturing method therefor, and a detection apparatus, which relate to the technical field of sensing. The piezoelectric sensor includes: an array substrate: a first capping layer located on the array substrate and including a first portion and a second portion, wherein the first portion covers the array substrate, a cavity is provided between the second portion and the array substrate, and the second portion is provided with a first opening: a first electrode located above the first capping layer and above the cavity, a piezoelectric thin film located on the first electrode, and a second electrode located on the piezoelectric thin film.

Disclosed herein are IC structures, packages, and devices that include III-N transistors integrated on the same substrate or die as resonators of RF filters. An example IC structure includes a support structure (e.g., a substrate), a resonator, provided over a first portion of the support structure, and an III-N transistor, provided over a second portion of the support structure. The IC structure includes a piezoelectric material so that first and second electrodes of the resonator enclose a first portion of the piezoelectric material, while a second portion of the piezoelectric material is enclosed between the channel material of the III-N transistor and the support structure. In this manner, one or more resonators of an RF filter may be monolithically integrated with one or more III-N transistors. Such integration may reduce costs and improve performance by reducing RF losses incurred when power is routed off chip.

Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

Embodiments of the present disclosure relate to a display substrate, a method for manufacturing the same, and a display device. The display substrate includes a substrate, a pixel definition layer for defining pixels on the substrate, the pixel definition layer including a plurality of inter-pixel portions located between adjacent pixels, and a fingerprint recognition sensor located in the inter-pixel portions.

A power factor improvement and power generation apparatus using a piezoelectric element may include: a first piezoelectric element having first and second electrodes, and vibrating when voltage is applied from a power line; and a second piezoelectric element having first and second electrodes, and generating electricity in accordance with vibration of the first piezoelectric element. This apparatus is possible to improve a power factor of a power line and generate power using the inherent condenser component, which a piezoelectric element has, instead of a power factor compensation condenser, and it is also possible to generate power.