A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Disclosed is a high-resistance resistor based on silicon carbide. The resistor includes a semi-insulating 4H-SiC silicon carbide substrate, a silicon surface and a carbon surface of the silicon carbide substrate are provided with symmetrical atomic-thickness aluminum oxide insulating layers, thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm, conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation, and thicknesses of the metal electrodes are 100 nm-500 nm. The present disclosure uses a high-resistance resistor based on silicon carbide that has the above structure, makes an ohmic contact electrode on a semi-insulating silicon carbide substrate, thus obtaining a resistor with a resistance of 100 TΩ or more, and satisfying requirements of the precision measurement industry.

Disclosed herein are via plug resistors for incorporation into electronic substrates, and related methods and devices. Exemplary via plug resistor structures include a resistive element within and on a surface of a via extending at least partially through an electronic substrate and first and second electrodes coupled to the resistive element.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. Dopants may be incorporated into the process to activate the reaction sought to produce a material useful in production of a doped semiconductor or a doped conductor suitable for the purpose of modulating the electrical, thermal or quantum properties of the material produced. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.

IC device structures including a lateral compound resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor. Rather than being stacked vertically, a compound resistive trace may include a plurality of resistive materials arranged laterally over a substrate. Along a resistive trace length, a first resistive material is in contact with a sidewall of a second resistive material. A portion of a first resistive material along a centerline of the resistive trace may be replaced with a second resistive material so that the second resistive material is embedded within the first resistive material.

IC device structures including a lateral compound resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in conjunction with fabrication of a transistor. Rather than being stacked vertically, a compound resistive trace may include a plurality of resistive materials arranged laterally over a substrate. Along a resistive trace length, a first resistive material is in contact with a sidewall of a second resistive material. A portion of a first resistive material along a centerline of the resistive trace may be replaced with a second resistive material so that the second resistive material is embedded within the first resistive material.