H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/0603
characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
H01L29/0603
characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
H01L29/0642
Isolation within the component, i.e. internal isolation
H01L29/0642
Isolation within the component, i.e. internal isolation