H
ELECTRICITY
H
ELECTRICITY
H01
ELECTRIC ELEMENTS
H01
ELECTRIC ELEMENTS
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/08
with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/0843
Source or drain regions of field-effect devices
H01L29/0843
Source or drain regions of field-effect devices
H01L29/0847
of field-effect transistors with insulated gate
H01L29/0847
of field-effect transistors with insulated gate