III-Nitride heterostructures with low p-type sheet resistance and III-Nitride heterostructure devices with gate recess and devices including the III-Nitride heterostructures are disclosed.

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a passivation layer covering the first gate conductor, and a second gate conductor disposed on the passivation layer and on a second region of the second nitride semiconductor layer, wherein the first region is laterally spaced apart from the second region.

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer. The semiconductor device further includes a first gate conductor disposed on a first region of the second nitride semiconductor layer, a first source electrode disposed on a first side of the first gate conductor, a first field plate disposed on a second side of the first gate conductor; and a capacitor having a first conductive layer and a second conductive layer and disposed on a second region of the second nitride semiconductor layer. Wherein the first conductive layer of the capacitor and the first source electrode have a first material, and the second conductive layer of the capacitor and the first field plate have a second material.

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a nitride semiconductor layer disposed on the substrate, a first gate stack in contact with the nitride semiconductor layer, and a resistor laterally spaced apart from the first gate stack and electrically connected to first gate stack. The resistor comprises a first conductive terminal in contact with the nitride semiconductor layer, a second conductive terminal in contact with the nitride semiconductor layer; a first doped region of the nitride semiconductor layer between the first conductive terminal and the second conductive terminal; and a first conductive region of the nitride semiconductor layer in contact with the first conductive terminal and the second conductive terminal.

The present invention discloses a high-threshold power semiconductor device and a manufacturing method thereof. The high-threshold power semiconductor device includes, in sequence from bottom to top: a metal drain electrode, a substrate, a buffer layer, and a drift region; further including: a composite column body which is jointly formed by a drift region protrusion, a columnar p-region and a columnar n-region on the drift region, a channel layer, a passivation layer, a dielectric layer, a heavily doped semiconductor layer, a metal gate electrode and a source metal electrode. The composite column body is formed by sequentially depositing a p-type semiconductor layer and an n-type semiconductor layer on the drift region and then etching same. The channel layer and the passivation layer are formed in sequence by deposition. Thus, the above devices are divided into a cell region and a terminal region. The dielectric layer, the heavily doped semiconductor layer, the metal gate electrode and the source metal electrode only exist in the cell region, and the passivation layer of the terminal region extends upwards and is wrapped outside the channel layer. This structure can increase a threshold voltage of the device, improve the blocking characteristics of the device and reduce the size of a gate capacitance.

Embodiments of the present invention provide a semiconductor device capable of improving both the thermal stability and contact resistance and a method for fabricating the same. According to an embodiment of the present invention, a semiconductor device may comprise: a contact plug over a substrate, wherein the contact plug includes: a silicide layer having a varying carbon content in a film, and a metal material layer over the silicide layer.

A semiconductor device includes a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer and having a first opening formed therein, a gate electrode disposed on the insulating layer and in contact with the semiconductor layer via the first opening, and a source electrode and a drain electrode in ohmic contact with the semiconductor layer. The gate electrode includes a crystallinity control film disposed on the insulating layer and having a second opening formed such that an inner wall thereof extends to an inner wall of the first opening toward the substrate in plan view in a direction perpendicular to a top surface of the substrate, and a first metal film disposed on the crystallinity control film and in Schottky contact with the semiconductor layer via the inner walls, extending to each other, of the second opening and the first opening.

A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate, a second nitride semiconductor layer disposed on the first nitride semiconductor layer, a passivation layer disposed on the second nitride semiconductor layer, a first adhesive layer disposed on the passivation layer. The semiconductor device further includes a conductive contact disposed on the first adhesive layer and extending through the first adhesive layer into the passivation layer, the conductive contact has a first overhang on the passivation layer and in direct contact with the first adhesive layer, and the conductive contact comprising a first element. A concentration of the first element is less than approximate 3% around to a contact between the first overhang and the passivation layer.

A gallium nitride (GaN) device, where a drain of the GaN device includes a p-type (P-GaN) layer and a drain metal. The drain metal includes a plurality of first structural intervals and a plurality of second structural intervals. The plurality of first structural intervals and the plurality of second structural intervals are alternately distributed in the gate width direction. In this way, the drain metal implements local injection of holes for the device in the first structural intervals, and forms ohmic contact in the second structural intervals, implementing current conduction from a drain to a source of the device.