Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
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H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
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H01L29/66007
Multistep manufacturing processes
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H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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H01L29/66227
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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H01L29/66409
Unipolar field-effect transistors
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H01L29/66416
Static induction transistors [SIT]
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H01L29/66416

Insulated-gate semiconductor device and method of manufacturing the same
11081576 · 2021-08-03 · ·

A method of manufacturing an insulated-gate semiconductor device, includes: digging a gate trench and a dummy trench; burying a dummy electrode in the dummy trench via a gate insulating film and burying a gate electrode in the gate trench via the gate insulating film; exposing an upper portion of the dummy electrode and selectively forming an insulating film for testing so as to cover the gate electrode; depositing a conductive film for testing on the dummy electrode and the insulating film for testing; and selectively testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the conductive film for testing and the charge transport, region.

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
20200273971 · 2020-08-27 · ·

A method of manufacturing an insulated-gate semiconductor device, includes: digging a gate trench and a dummy trench; burying a dummy electrode in the dummy trench via a gate insulating film and burying a gate electrode in the gate trench via the gate insulating film; exposing an upper portion of the dummy electrode and selectively forming an insulating film for testing so as to cover the gate electrode; depositing a conductive film for testing on the dummy electrode and the insulating film for testing; and selectively testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the conductive film for testing and the charge transport, region.