A display device includes: a substrate configured to contain an organic material; a first underlying film provided above the substrate; a thin film transistor provided above the first underlying film; a semiconductor film included in the thin film transistor and configured to have a channel region; and an electric field inhibition film provided between the first underlying film and the semiconductor film and configured to overlap the channel region in a plan view. The electric field inhibition film has a higher permittivity than the first underlying film.

A display structure is provided. The display structure includes a substrate, a dam, a first film layer, a second film layer, and a third film layer. The third film layer has a first spread rate for the first film layer, the third film layer has a second spread rate for the second film layer, and the first spread rate is less than the second spread rate. The spread rates of the third film layer on the first and second film layers are different, so as to slow the spread rate of the third film layer near an area of the dam, thereby reducing the risk that the third film layer overflows the dam, so that the encapsulation reliability of the display structure can be improved.

A display device includes: a substrate configured to contain an organic material; a first underlying film provided above the substrate; a thin film transistor provided above the first underlying film; a semiconductor film included in the thin film transistor and configured to have a channel region; and an electric field inhibition film provided between the first underlying film and the semiconductor film and configured to overlap the channel region in a plan view. The electric field inhibition film has a higher permittivity than the first underlying film.

A display structure is provided. The display structure includes a substrate, a dam, a first film layer, a second film layer, and a third film layer. The third film layer has a first spread rate for the first film layer, the third film layer has a second spread rate for the second film layer, and the first spread rate is less than the second spread rate. The spread rates of the third film layer on the first and second film layers are different, so as to slow the spread rate of the third film layer near an area of the dam, thereby reducing the risk that the third film layer overflows the dam, so that the encapsulation reliability of the display structure can be improved.

Presented herein is a device including an insulator layer disposed over a substrate. An adhesion layer is disposed over the insulator layer and includes a semiconductor oxide, the semiconductor oxide includes a compound of a semiconductor element and oxygen. A semiconductor film layer is over the adhesion layer, the semiconductor film layer being a material that includes the semiconductor element, the semiconductor film layer having a different composition than the adhesion layer. Bonds at an interface between the insulator layer and the adhesion layer comprise oxygen-hydrogen bonds and oxygen-semiconductor element bonds. An interface between a dummy gate and a gate dielectric layer of a gate-last transistor structure may be similarly formed.

Composite substrates for use in semiconductor switching devices, including insulated gate bipolar transistors (IGBT), switching devices formed therewith, and methods of use. The composite substrate includes a nano-scale graphene film on a sapphire-containing surface of a dielectric substrate, wherein the nano-scale graphene film and sapphire-containing surface exhibit lattice alignment properties capable of improving thermal performance of the switching device and reducing local temperature hotspots in the switching device.