H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
H01L29/66227
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
H01L29/66227
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
H01L29/66795
with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
H01L29/66795
with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
H01L29/6681
using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
H01L29/6681
using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability