An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.

Examples described in this disclosure relate to gating a semiconductor layer into a quantum spin Hall insulator state, Certain examples further relate to using quantum spin Hall insulators as topological quantum qubits. Quantum spin Hall systems may rely upon the quantum spin Hall effect by causing a state of a matter to change from a certain phase to an inverted bandgap phase. In one example, the present disclosure relates to a device including a semiconductor layer comprising an active material. The device further includes a gate coupled to the semiconductor layer, where the semiconductor layer is operable in a quantum spin Hall insulator state by using electrons and holes from the active material in response to an application of an electric field to the semiconductor layer via the gate.

The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

An apparatus is provided which comprises: a magnetic junction having a magnet with perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device. In some embodiments, the apparatus comprises an interconnect partially adjacent to the structure of the magnetic junction, wherein the interconnect comprises a spin orbit material, wherein the interconnect has a pocket comprising non-spin orbit material, wherein the pocket is adjacent to the magnet of the magnetic junction. In some embodiments, the non-spin orbit material comprises metal which includes one or more of: Cu, Al, Ag, or Au.

Embodiments described herein provide systems and methods for acoustically driving spin rotations of diamond nitrogen-vacancy (NV) centers using acoustic transducers. The acoustic transducers may comprise devices such as bulk acoustic resonators or surface acoustic resonators. The systems and methods may allow driving of m.sub.s=0 to m.sub.s=−1, m.sub.s=0 to m.sub.s=+1, m.sub.s=−1 to m.sub.s=0, and m.sub.s=+1 to m.sub.s=0 single-quantum (SQ) spin transitions without the need to apply magnetic field pulses. This may substantially reduce the size and power requirements of NV center-based sensors. The systems and methods may be used to conduct a variety of measurements, such as measurements of magnetic field, electric field, orientation, strain, or temperature.

An apparatus is provided to improve spin injection efficiency from a magnet to a spin orbit coupling material. The apparatus comprises: a first magnet; a second magnet adjacent to the first magnet; a first structure comprising a tunneling barrier; a third magnet adjacent to the first structure; a stack of layers, a portion of which is adjacent to the third magnet, wherein the stack of layers comprises spin-orbit material; and a second structure comprising magnetoelectric material, wherein the second structure is adjacent to the first magnet.

A semiconductor device includes a layer of a semiconductor material in which is formed an active zone; a plurality of first gates forming a plurality of lines substantially parallel to each other and covering in part the active zone; a plurality of second gates forming a plurality of columns; at least one third gate, designated measurement gate, extending along an axis substantially parallel to the lines of the plurality of lines and in a direction opposite to the lines of the plurality of lines with respect to the active zone, and a first electrode and a second electrode situated on either side of the plurality of measurement gates in the active zone.

A quantum processing system is disclosed. In one embodiment, a quantum processing system comprises: a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site; and a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits. Where, at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the [110] direction of the silicon crystal substrate and are configured to operate as qubits.

Methods, devices, and systems are described for storing and transferring quantum information. An example device may comprise at least one semiconducting layer, one or more conducting layers configured to define at least two quantum states in the at least one semiconducting layer and confine an electron in or more of the at least two quantum states, and a magnetic field source configured to generate an inhomogeneous magnetic field. The inhomogeneous magnetic field may cause a first coupling of an electric charge state of the electron and a spin state of the electron. The device may comprise a resonator configured to confine a photon. An electric-dipole interaction may cause a second coupling of an electric charge state of the electron to an electric field of the photon.

Processor elements are described herein. A processor element comprises a silicon layer. The processor element further comprises one or more conductive electrodes. The processor element further comprises dielectric material having a non-uniform thickness, the dielectric material disposed at least between the silicon layer and the one or more conductive electrodes. In use, when a bias potential is applied to one or more of the conductive electrodes, the positioning of the one or more conductive electrodes and the non-uniform thickness of the dielectric material together define an electric field profile to induce a quantum dot at an interface between the silicon layer and the dielectric layer. Methods are also described herein.