A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.

Disclosed is a semiconductor module including a substrate, a first semiconductor layer positioned on the substrate, an insulator positioned in a partial region on the first semiconductor layer, a second semiconductor layer positioned on the insulator, a first semiconductor device formed on the first semiconductor layer, and a second semiconductor device formed on the second semiconductor layer, wherein one of the first semiconductor layer and the second semiconductor layer includes gallium oxide (Ga.sub.2O.sub.3) and the other includes silicon (Si).

An embodiment semiconductor module includes a substrate, a heterogeneous thin film including a first semiconductor layer disposed on a first region of the substrate and a second semiconductor layer disposed on a second region of the substrate, a first semiconductor device disposed on the first semiconductor layer of the heterogeneous thin film, and a second semiconductor device disposed on the second semiconductor layer of the heterogeneous thin film, wherein one of the first semiconductor layer or the second semiconductor layer comprises gallium oxide (Ga.sub.2O.sub.3) and the other includes silicon (Si).

For example, a semiconductor device includes one or more first subcontacts electrically conducted to a substrate. At least one of the one or more first subcontacts is formed in an element arrangement region, and has a lower impedance than the substrate. Preferably, at least one of the one or more first subcontacts is adjacent to a circuit element formed in the element arrangement region. Preferably, on the substrate, which is of a first conductivity type, an epilayer of a second conductivity type is formed, and the one or more first subcontacts include a first line having a lower impedance than the substrate, and a semiconductor region of the first conductivity type penetrating through the epilayer to electrically conduct the first line and the substrate to each other.

A device includes a MOS transistor and a bipolar transistor at a same first portion of a substrate. The first portion includes a first well doped with a first type forming the channel of the MOS transistor and two first regions doped with a second type opposite to the first type that are arranged in the first well which form the source and drain of the MOS transistor. The first portion further includes: a second well doped with the second type that is arranged laterally with respect to the first well to form the base of the bipolar transistor; a second region doped with the first type that is arranged in the second well to form the emitter of the bipolar transistor; and a third region doped with the first type that is arranged under the second well to form the collector of the bipolar transistor.

Bipolar junction transistor (BJT) structures are provided. A BJT structure includes a semiconductor substrate, a collector region formed in the semiconductor substrate, a base region formed over the collector region, an emitter region formed over the collector region, a ring-shaped shallow trench isolation (STI) region formed in the collector region, and a base dielectric layer formed over the collector region and on opposite sides of the base region. The base dielectric layer is surrounded by an inner side wall of the ring-shaped STI region.

A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the <111>-surface, and forming a HEMT-structure above the <111>-surface.

Methods for manufacturing a bipolar junction transistor are provided. A method includes providing a semiconductor substrate having a trench isolation, where a pad resulting from a manufacturing of the trench isolation is arranged on the semiconductor substrate, providing an isolation layer on the semiconductor substrate and the pad such that the pad is covered by the isolation layer, removing the isolation layer up to the pad, and selectively removing the pad to obtain an emitter window.

Methods of according to the present disclosure can include: providing a substrate including: a first semiconductor region, a second semiconductor region, and a trench isolation (TI) laterally between the first and second semiconductor regions; forming a seed layer on the TI and the second semiconductor region of the substrate, leaving the first semiconductor region of the substrate exposed; forming an epitaxial layer on the substrate and the seed layer, wherein the epitaxial layer includes: a first semiconductor base material positioned above the first semiconductor region of the substrate, and an extrinsic base region positioned above the seed layer; forming an opening within the extrinsic base material and the seed layer to expose an upper surface of the second semiconductor region; and forming a second semiconductor base material in the opening.

A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.