H
ELECTRICITY
H
ELECTRICITY
H01
ELECTRIC ELEMENTS
H01
ELECTRIC ELEMENTS
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70
Bipolar devices
H01L29/70
Bipolar devices
H01L29/72
Transistor-type devices, i.e. able to continuously respond to applied control signals
H01L29/72
Transistor-type devices, i.e. able to continuously respond to applied control signals
H01L29/739
controlled by field-effect,; e.g. bipolar static induction transistors [BSIT]
H01L29/739
controlled by field-effect,; e.g. bipolar static induction transistors [BSIT]
H01L29/7393
Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
H01L29/7393
Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
H01L29/7395
Vertical transistors, e.g. vertical IGBT
H01L29/7395
Vertical transistors, e.g. vertical IGBT
H01L29/7396
with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
H01L29/7396
with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
H01L29/7397
and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
H01L29/7397
and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT