A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

In a switching circuit, an inductance of an inductor of a shunt circuit is such that off capacitance of a second switching device that is in the off state when a first switching device is in the on state is used to define, in the shunt circuit, a series resonance circuit with a desired resonant frequency. Therefore, the frequency of an unnecessary signal to be attenuated is set to the resonant frequency of the series resonance circuit. Thus, the switching circuit achieves improved isolation characteristics with other circuits by attenuating the unnecessary signal.

Electronic devices are formed on donor substrates and transferred to carrier substrates by forming bonding regions on the electronic devices and bonding the bonding regions to a carrier substrate. The transfer process may include forming anchors and removing sacrificial regions.

In a switching circuit, an inductance of an inductor of a shunt circuit is such that off capacitance of a second switching device that is in the off state when a first switching device is in the on state is used to define, in the shunt circuit, a series resonance circuit with a desired resonant frequency. Therefore, the frequency of an unnecessary signal to be attenuated is set to the resonant frequency of the series resonance circuit. Thus, the switching circuit achieves improved isolation characteristics with other circuits by attenuating the unnecessary signal.

A vertical SiC MOSFET having a source terminal, a drain terminal, and a gate region, as well as an epitaxial layer disposed between the source terminal and the drain terminal and having a doping of a first type, is furnished, a horizontally extending intermediate layer, which has regions having a doping of a second type different from the doping of a first type, being embedded into the epitaxial layer. The vertical SiC MOSFET is notable for the fact that at least the regions having doping of a second type are electrically conductively connected to the source terminal. The gate region can be disposed in a gate trench.

According to an aspect of the present inventive concept there is provided a field-effect transistor and a method for controlling such. The transistor comprises: a semiconductor layer; a source terminal, a drain terminal and a single gate.

The source and drain terminals are arranged on a first side of the semiconductor layer and the gate is arranged on a second side of the semiconductor layer opposite the first side.

The gate and the source terminal are arranged to overlap with a first common region of the semiconductor layer and the gate and the drain terminal are arranged to overlap with a second common region of the semiconductor layer.

The semiconductor layer further comprises a first gap region and a second gap region which the gate does not overlap.

The gate is configured to induce an electrostatic doping of the first and second common regions and induce a channel in a channel region of the semiconductor layer, extending between the first and second common regions.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

A method of manufacturing an insulated-gate semiconductor device, includes: digging a gate trench and a dummy trench; burying a dummy electrode in the dummy trench via a gate insulating film and burying a gate electrode in the gate trench via the gate insulating film; exposing an upper portion of the dummy electrode and selectively forming an insulating film for testing so as to cover the gate electrode; depositing a conductive film for testing on the dummy electrode and the insulating film for testing; and selectively testing an insulating property of the gate insulating film in the dummy trench by applying a voltage between the conductive film for testing and the charge transport, region.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Presented is a lateral fin static induction transistor including a semi conductive substrate, source and drain regions extending from an optional buffer layer of same or varied thickness supported by the semi conductive substrate, a semi conductive channel electrically coupling the source region to the drain region of the transistor, a portion of the semi conductive channel being a fin and having a face covered by a gated structure, thereby defining a gated channel within the semi conductive channel, the semi conductive channel further including a drift region electrically coupling the gated channel to the drain region of the transistor.