A display device including a pixel electrode disposed in an opening area; a common electrode of which at least a region is disposed to be overlapped with the pixel electrode; a gate line extending along a first direction in a non-opening area surrounding the opening area and transmitting a gate signal to the pixel electrode; a data line extending along a second direction different from the first direction in the non-opening area, and transmitting a data signal to the pixel electrode; and a dummy line disposed to be overlapped with the data line in the non-opening area and electrically connected to the common electrode.

A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

A display panel includes a substrate, a plurality of pixel driving circuits, a plurality of first data lines, a plurality of second data lines and at least one shielding line. A first data line in the plurality of first data lines is electrically connected to pixel driving circuits in even-numbered rows in a same column of pixel driving circuits. A second data line in the plurality of second data lines that is arranged adjacent to the first data line is electrically connected to pixel driving circuits in odd-numbered rows in a same column of pixel driving circuits. The first data line and the second data line have an overlapping area therebetween. The at least one shielding line is configured to transmit a fixed voltage. The at least one shielding line constitutes a first capacitor with the first data line, and/or a second capacitor with the second data line.

A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.

A display device includes: a substrate including a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, where the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area; a first inorganic layer continuously arranged in the transmission area on the substrate, where a lower opening overlapping the bending area is defined through the first inorganic layer; a blocking layer on the first inorganic layer, a blocking layer opening overlapping the transmission area and an intermediate opening overlapping the lower opening are defined through the blocking layer; and a display element layer on the blocking layer, where the display element layer includes a first display element overlapping the first pixel area and a second display element overlapping the second pixel area.

The present invention provides an array substrate and a display panel. The array substrate includes: an underlay; a source electrode and drain electrode disposed on underlay; a light shielding portion disposed on underlay; an active layer correspondingly disposed on the source electrode, the drain electrode, and the light shielding portion. The active layer includes a channel region, and the light shielding portion is disposed to correspond to the channel region. The present invention reduces processes and lowers cost by disposing the source electrode, the drain electrode, and the light shielding portion in a same layer such that the source electrode, the drain electrode, and the light shielding portion are simultaneously formed with a same material by a same process.

A 3-dimensional array of NOR memory strings being organized by planes of NOR memory strings, in which (i) the storage transistors in the NOR memory strings situated in a first group of planes are configured to be programmed, erased, program-inhibited or read in parallel, and (ii) the storage transistors in NOR memory strings situated within a second group of planes are configured for storing resource management data relating to data stored in the storage transistors of the NOR memory strings situated within the first group of planes, wherein the storage transistors in NOR memory strings in the second group of planes are configured into sets.

An electronic device including a first substrate, a semiconductor layer, a second substrate and a color filter is disclosed. The first substrate has a peripheral region. The semiconductor layer is disposed on the first substrate in the peripheral region. The second substrate is opposite to the first substrate. The color filter is disposed between the first substrate and the second substrate and in the peripheral region of the first substrate, and the color filter overlaps the semiconductor layer.

The present disclosure provides a thin film transistor (TFT) substrate and a display device, the TFT substrate includes an base substrate and a plurality of pixel units, wherein each of the pixel units includes a TFT on the base substrate, the TFT includes a source drain layer, an active layer, and a gate layer; the TFT substrate further includes a light shielding layer on a side of the source drain layer of the TFT distal to the base substrate, and an orthographic projection of the light shielding layer on the base substrate completely covers an orthographic projection of the active layer of the TFT on the base substrate, and partially covers an orthographic projection of the gate layer of the TFT on the base substrate.

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.