Gallium nitride (GaN) integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate including silicon, the substrate having a top surface. A first trench is in the substrate, the first trench having a first width. A second trench is in the substrate, the second trench having a second width less than the first width. A first island is in the first trench, the first island including gallium and nitrogen and having first corner facets below the top surface of the substrate. A second island is in the second trench, the second island including gallium and nitrogen and having second corner facets below the top surface of the substrate.

A stretchable display panel, a method for compensating a threshold voltage of a transistor in the stretchable display panel, and a computer readable storage medium. The stretchable display panel includes: a base substrate; a transistor on the base substrate, the transistor includes a gate electrode layer and an active layer that are at least partially stacked; and a voltage compensation layer, the voltage compensation layer is located between the transistor and the base substrate, wherein the voltage compensation layer is applied with a compensation voltage that depends on a stretching amount of the stretchable display panel.

To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

An array substrate includes: a first substrate; a plurality of gate lines and a plurality of data lines; a plurality of thin film transistors; and a plurality of reflective electrodes. The plurality of gate lines and the plurality of data lines define a plurality of sub-pixel regions. A thin film transistor is located in a sub-pixel region. A reflective electrode is located in the sub-pixel region and electrically connected to the thin film transistor in the same sub-pixel region. Each reflective electrode has a border including a plurality of first sub-borders extending in a first direction, a plurality of second sub-borders extending in a second direction, and a plurality of chamfer borders each connecting a first sub-border and a second sub-border that are adjacent; and an intersection of extension lines of the first sub-border and the second sub-border is located outside the border of the reflective electrode.

One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.

Semiconductor devices and method of forming the same are provided. In one embodiment, a semiconductor device includes a first transistor and a second transistor. The first transistor includes two first source/drain features and a first number of nanostructures that are stacked vertically one over another and extend lengthwise between the two first source/drain features. The second transistor includes two second source/drain features and a second number of nanostructures that are stacked vertically one over another and extend lengthwise between the two second source/drain features.

An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

A display device includes a pixel circuit disposed on a substrate, and a display element on the pixel circuit. The pixel circuit includes a first thin-film transistor comprising a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, a second thin-film transistor comprising a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer being connected to the first semiconductor layer and the first gate electrode, a first shielding layer overlapping the second semiconductor layer, and a second shielding layer overlapping the second semiconductor layer and stacked on the first shielding layer.

An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

A pixel driving circuit includes a first thin film transistor having a double-gate structure, a conductive layer and a second thin film transistor. The first thin film transistor includes a first active layer. The first active layer includes a first and second semiconductor portions and a conductor portion located therebetween. The conductor portion has a first doping concentration. The conductive layer is at least partially opposite to the conductor portion, so that the conductive layer and the conductor portion form a capacitor. The conductive layer is configured to electrically connect to an initial voltage terminal. The second thin film transistor includes a second active layer and a first gate. A portion of the second active layer directly opposite to the first gate has a second doping concentration, and the second doping concentration is lower than the first doping concentration.