A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

A semiconductor device includes a pad formed on a surface of a substrate, a bonding wire for connecting the pad to an external circuit, and a resin layer covering at least a connection portion between the pad and the bonding wire and exposing at least a part of the substrate outside the pad.

A pressure sensor includes a base substrate, a first insulating layer at the base substrate, a stationary electrode at the first insulating layer, a side-wall portion around the stationary electrode at the first insulating layer, and a membrane having electrical conductivity, facing the stationary electrode across a space, and supported by the side-wall portion. The side-wall portion includes a shield electrode on the first insulating layer and a second insulating layer on the shield electrode. A distance between the stationary electrode and the membrane is less than a distance between the shield electrode and the membrane.

The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

The present disclosure provides a piezoelectric sensor, a pressure detecting device, their manufacturing methods and a detection method. The piezoelectric sensor comprises a thin film transistor located on a substrate and comprising an active layer, and a piezoelectric layer that is in contact with the active layer of the thin film transistor.

An angular rate sensor includes an annular resonator. The resonator includes an annular base material made of a first material, and an annular first low thermal conductor made of a second material having a lower thermal conductivity than the first material, the first low thermal conductor being sandwiched between an annular first region and an annular second region on an inner side of the first region in the base material over substantially an entire circumference of the resonator.

An angular rate sensor includes an annular resonator. The resonator includes an annular base material made of a first material, and an annular first low thermal conductor made of a second material having a lower thermal conductivity than the first material, the first low thermal conductor being sandwiched between an annular first region and an annular second region on an inner side of the first region in the base material over substantially an entire circumference of the resonator.

A piezo-junction device may be provided. The piezo-junction device comprises a piezoelectric element comprising two electrodes and piezoelectric material in-between, and a semiconductor junction device adjacent to the piezoelectric element such that one of the two electrodes of the piezoelectric element is in contact with the semiconductor junction device connecting the semiconductor junction device and the piezoelectric element electrically in series. Thereby, the semiconductor junction device and the piezoelectric element are together positioned in a fixed mechanical clamp such that the piezoelectric element with an applied electrical field applies strain to the semiconductor junction device causing a change in Fermi levels of the semiconductor junction device.

A piezo-junction device may be provided. The piezo-junction device comprises a piezoelectric element comprising two electrodes and piezoelectric material in-between, and a semiconductor junction device adjacent to the piezoelectric element such that one of the two electrodes of the piezoelectric element is in contact with the semiconductor junction device connecting the semiconductor junction device and the piezoelectric element electrically in series. Thereby, the semiconductor junction device and the piezoelectric element are together positioned in a fixed mechanical clamp such that the piezoelectric element with an applied electrical field applies strain to the semiconductor junction device causing a change in Fermi levels of the semiconductor junction device.

A highly accurate torque sensor is provided by reducing the size of the shape. A torque sensor comprises a fourth structure and a fifth structure provided between a first structure and a second structure, a first strain sensor provided on the fourth structure, and a second strain sensor provided on the fifth structure. Each of the fourth structure and the fifth structure comprises a first connection section connected to one end of the first strain sensor or the second strain sensor, a second connection section connected to the other end of the first strain sensor or the second strain sensor, and a third connection section and a fourth connection section provided between the first connection section and the second connection section and possessing stiffness lower than the first connection section and the second connection section.