H01L29/84

RESONANT SENSOR USING MEMS RESONATOR, AND DETECTION METHOD BY RESONANT SENSOR
20230048120 · 2023-02-16 ·

A temperature sensor is a temperature sensor using a MEMS resonator, and includes: a MEMS resonator; a sweeper that sweeps a frequency of an excitation signal for a vibrator of the MEMS resonator in a predetermined sweep direction, and outputs the excitation signal swept to the MEMS resonator; a discontinuity point detector that obtains a vibration state information signal, which is a characteristic quantity expressing a vibration state of the vibrator based on the excitation signal, from the MEMS resonator, and detects a detection value that is (i) a frequency of the excitation signal when the vibration state information signal obtained changes discontinuously or (ii) a time corresponding to the frequency; and a converter that determines a physical quantity acting on the MEMS resonator based on the detection value detected.

MEMS device with electrodes and a dielectric

A MEMS device can include a first support layer, a second support layer, and a solid dielectric suspended between the first support layer and the second support layer. The solid dielectric can move relative to the first support layer and the second support layer and can include a plurality of apertures. The MEMS device can include a first plurality of electrodes coupled to the first support layer and the second support layer and extending through a first subset of the plurality of apertures. The MEMS device can include a second plurality of electrodes coupled to the first support layer and extending partially into a second subset of the plurality of apertures. The MEMS device can include a third plurality of electrodes coupled to the second support layer and extending partially into a third subset of the plurality of apertures.

MEMS device with electrodes and a dielectric

A first electrode of a MEMS device can be oriented lengthwise along and parallel to an axis, and can have a first end and a second end. A second electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. A third electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. The first, second, and third electrodes can each be located at least partially within an aperture of a plurality of apertures of a solid dielectric that can surround the second electrode second end and the third electrode first end. The second electrode first end and the third electrode second end can be located outside of the solid dielectric.

SEMICONDUCTOR SENSOR DEVICE

The purpose of the present invention is to improve the pressure resistance of a cavity in a semiconductor sensor device employing a resin package, and to do so without adversely affecting the embeddability of an electrically conductive member. The semiconductor sensor device has a gap 1a sealed in an airtight manner inside a laminate structure of a plurality of laminated substrates 1, 4, and 5, and has a structure in which the outside of the laminate structure is covered by a resin, wherein a platy component 2 having at least one side that is greater in length than the length of one side of the gap 1a along this side is arranged to the outside of an upper wall 1b of the gap 1, the upper wall 1b of the gap being mechanically suspended by the platy component 2.

PIEZO-RESISTIVE TRANSISTOR BASED RESONATOR WITH FERROELECTRIC GATE DIELECTRIC

Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.

FORCE SENSOR MODULE
20230003591 · 2023-01-05 ·

A force sensor module includes multiple force sensors disposed in series. The force sensors each include multiple sensor sections, a support substrate, and an organic member. The multiple sensor sections have respective force detection directions different from each other. The support substrate is separately provided for each of the force sensors and supports the multiple sensor sections. The organic member is provided in common to the force sensors. The organic member fixes the multiple force sensors in series and has a groove at a location corresponding to a gap between two support substrates adjacent to each other. The organic member is flexible.

PRESSURE SENSOR CHIP AND PRESSURE SENSOR
20230228639 · 2023-07-20 ·

A pressure sensor chip includes a third conductive layer, a second insulating layer, a first conductive layer, a first insulating layer, and a second conductive layer stacked in order. The first insulating layer includes first and second cavities communicating externally. The second insulating layer includes third and fourth cavities respectively communicating with the second and first cavities. The first conductive layer includes first and second diaphragms, the second conductive layer includes first and second electrodes, and the third conductive layer includes third and fourth electrodes. The first diaphragm and the first electrode face each other with the cavity interposed therebetween, the second diaphragm and the electrode face each other with the first cavity interposed therebetween, the first diaphragm and the third electrode face each other with the fourth cavity interposed therebetween, and the second diaphragm and the fourth electrode face each other with the fourth cavity interposed therebetween.

PRESSURE SENSOR DEVICE
20230228641 · 2023-07-20 ·

A pressure sensor device includes a base including joint portions to join to a mounting substrate, and an oscillator to oscillate with respect to the base. The oscillator includes a capacitor including a membrane that is deformable in accordance with an ambient pressure difference as a sensor electrode and a facing electrode spaced apart from the membrane. The membrane does not overlap the base in plan view in a direction orthogonal or substantially orthogonal to the membrane.

MEMS MODULE AND METHOD OF MANUFACTURING MEMS MODULE
20230016416 · 2023-01-19 · ·

A MEMS module includes: a MEMS element provided with a substrate in which a hollow portion is formed, and including a movable portion, which is a part of the substrate, around the hollow portion, the movable portion having a thickness whose shape is changeable by an air pressure difference between an air pressure inside the hollow portion and an air pressure outside the substrate; and an electronic component, to which an output signal of the MEMS element is inputted, formed on the substrate, wherein the electronic component and the MEMS element are spaced apart from each other in a direction perpendicular to a thickness direction of the movable portion.

MEMS MODULE AND METHOD OF MANUFACTURING MEMS MODULE
20230016416 · 2023-01-19 · ·

A MEMS module includes: a MEMS element provided with a substrate in which a hollow portion is formed, and including a movable portion, which is a part of the substrate, around the hollow portion, the movable portion having a thickness whose shape is changeable by an air pressure difference between an air pressure inside the hollow portion and an air pressure outside the substrate; and an electronic component, to which an output signal of the MEMS element is inputted, formed on the substrate, wherein the electronic component and the MEMS element are spaced apart from each other in a direction perpendicular to a thickness direction of the movable portion.