An ESD protection diode in a semiconductor device includes: a semiconductor substrate; a diode group that has a plurality of grouped VNW diodes, each of the VNW diodes having a VNW having a lower end and an upper end, that are formed on the semiconductor substrate and have a semiconductor material; and a top plate that is formed above the diode group and is a conductive layer electrically connected to the upper ends of the VNWs of the respective VNW diodes, and there is fabricated the semiconductor device that is capable of, even when large current flows through the VNW diode, suppressing current concentration and preventing damage of the VNW diode.

A control device for controlling at least one LED module includes: a power supply module arranged to receive power over Ethernet to generate a first supply power; and an illumination controlling module coupled to the power supply module for receiving a communication signal from the Ethernet to generate a serial bus signal to control an illumination of the at least one LED module; wherein the illumination controlling module is powered by the first supply power.

A control device for controlling at least one LED module includes: a power supply module arranged to receive power over Ethernet to generate a first supply power; and an illumination controlling module coupled to the power supply module for receiving a communication signal from the Ethernet to generate a serial bus signal to control an illumination of the at least one LED module; wherein the illumination controlling module is powered by the first supply power.

An eighth semiconductor portion is provided between the first semiconductor portion and the third semiconductor portion. The eighth semiconductor portion is of the second conductivity type, contacting the first semiconductor portion, and having a lower second-conductivity-type impurity concentration than the second semiconductor portion.

An eighth semiconductor portion is provided between the first semiconductor portion and the third semiconductor portion. The eighth semiconductor portion is of the second conductivity type, contacting the first semiconductor portion, and having a lower second-conductivity-type impurity concentration than the second semiconductor portion.

A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.

A voltage regulator is provided wherein electricity flows through a second transistor in an operating state in which a control unit) applies an operating voltage to a base of the second transistor. A Zener diode sets, in the operating state, a voltage of a second conductive path to a voltage corresponding to a voltage across the Zener diode. A current corresponding to an addition value obtained by adding a value of a current flowing through a second resistor portion in the operating state, a value of a current flowing through a third resistor portion in the operating state, and a value of a current flowing through the Zener diode in the operating state flows through a ground-side resistor portion. A control unit stops the output of the operating voltage when a voltage of the second conductive path is lower than or equal to a threshold value.

A voltage regulator is provided wherein electricity flows through a second transistor in an operating state in which a control unit) applies an operating voltage to a base of the second transistor. A Zener diode sets, in the operating state, a voltage of a second conductive path to a voltage corresponding to a voltage across the Zener diode. A current corresponding to an addition value obtained by adding a value of a current flowing through a second resistor portion in the operating state, a value of a current flowing through a third resistor portion in the operating state, and a value of a current flowing through the Zener diode in the operating state flows through a ground-side resistor portion. A control unit stops the output of the operating voltage when a voltage of the second conductive path is lower than or equal to a threshold value.

Methods of forming a capacitor structure might include forming a first and second conductive regions having first and second conductivity types, respectively, in a semiconductor material, forming a dielectric overlying the first and second conductive regions, forming a conductor overlying the dielectric, and patterning the conductor, the dielectric, and the first and second conductive regions to form a first island of the first conductive region, a second island of the first conductive region, an island of the second conductive region, a first portion of the dielectric overlying the first island of the first conductive region separated from a second portion of the dielectric overlying the second island of the first conductive region and the island of the second conductive region, and a first portion of the conductor overlying the first portion of the dielectric separated from a second portion of the conductor overlying the second portion of the dielectric.

Methods of forming a capacitor structure might include forming a first and second conductive regions having first and second conductivity types, respectively, in a semiconductor material, forming a dielectric overlying the first and second conductive regions, forming a conductor overlying the dielectric, and patterning the conductor, the dielectric, and the first and second conductive regions to form a first island of the first conductive region, a second island of the first conductive region, an island of the second conductive region, a first portion of the dielectric overlying the first island of the first conductive region separated from a second portion of the dielectric overlying the second island of the first conductive region and the island of the second conductive region, and a first portion of the conductor overlying the first portion of the dielectric separated from a second portion of the conductor overlying the second portion of the dielectric.