A semiconductor package and a method of manufacturing the same, and an imaging apparatus are provided. The method includes preparing a substrate having a first connection region and a sensor chip having a second connection region. A first bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the first connection region. A second bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the second connection region. The substrate and the sensor chip are overlapped to align and tightly compress the first and second bonding layers, to obtain a composite structure. The composite structure is treated at a temperature of 30 to 180° C., under a pressure of 1 to 8 MPa, and with an ultrasonic of 10 to 30 kHz to form the first and second bonding layers into a eutectic.

An inter-substrate bond structure includes an adhesion layer that attached to a first substrate, and an outer gas-permeable layer coupled to the adhesion layer. The outer gas-permeable layer expands and fractures in response to absorbing a gas. The inter-substrate bond structure includes an outer bond layer coupled to the outer gas-permeable layer. The outer bond layer forms an initial thermocompression bond with a mating layer on a second substrate. The initial thermocompression bond bonds the first substrate to the second substrate with the inter-substrate bond structure. The fracture in the inter-substrate bond structure debonds the first substrate from the second substrate while leaving a first portion of the inter-substrate bond structure attached to the first substrate.

A display device and a method of manufacturing the same are provided. The display device includes a first electrode disposed on a substrate, an adhesive auxiliary layer disposed on the first electrode and including a self-assembled monolayer, a light emitting element disposed on the adhesive auxiliary layer, and a contact electrode disposed between the adhesive auxiliary layer and the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an intermediate layer disposed between the first semiconductor layer and the second semiconductor layer.

A display device and a method of manufacturing the same are provided. The display device includes a first electrode disposed on a substrate, an adhesive auxiliary layer disposed on the first electrode and including a self-assembled monolayer, a light emitting element disposed on the adhesive auxiliary layer, and a contact electrode disposed between the adhesive auxiliary layer and the light emitting element. The light emitting element includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an intermediate layer disposed between the first semiconductor layer and the second semiconductor layer.

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175 C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases.

The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175 C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175 C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases.

The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175 C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.

One aspect is a logic power module, with at least one logic component, at least one power component and a substrate. The logic element and the power component are provided in separate areas on the substrate. The logic component on the substrate is provided by thick printed copper; and the power component is provided by a metal-containing thick-film layer, and, provided thereon, a metal foil.

One aspect is a logic power module, with at least one logic component, at least one power component and a substrate. The logic element and the power component are provided in separate areas on the substrate. The logic component on the substrate is provided by thick printed copper; and the power component is provided by a metal-containing thick-film layer, and, provided thereon, a metal foil.

Disclosed herein are electrically conductive adhesives (ECA) comprising: (a) organic binder, (b) electrically conductive powders comprised of surface coated spherical copper particles and surface coated flaky copper particles, and optional (c) solvent.

Disclosed herein are electrically conductive adhesives (ECA) comprising: (a) organic binder, (b) electrically conductive powders comprised of surface coated spherical copper particles and surface coated flaky copper particles, and optional (c) solvent.