The present invention: makes it possible to improve the reliability of a semiconductor device; and provides a method of manufacturing the semiconductor device comprising the steps of (a) providing a semiconductor wafer having a pad electrode, a first conductive layer comprised of copper, a photoresist film, and a second conductive layer comprised of gold, (b) forming a protective film comprised of iodine on the surface of the second conductive layer, (c) removing the photoresist film, (d) irradiating the protective film with argon ions and removing the protective film, and (e) bringing a part of a bonding wire into contact with the surface of the second conductive layer.

The present invention: makes it possible to improve the reliability of a semiconductor device; and provides a method of manufacturing the semiconductor device comprising the steps of (a) providing a semiconductor wafer having a pad electrode, a first conductive layer comprised of copper, a photoresist film, and a second conductive layer comprised of gold, (b) forming a protective film comprised of iodine on the surface of the second conductive layer, (c) removing the photoresist film, (d) irradiating the protective film with argon ions and removing the protective film, and (e) bringing a part of a bonding wire into contact with the surface of the second conductive layer.

The present invention: makes it possible to improve the reliability of a semiconductor device; and provides a method of manufacturing the semiconductor device comprising the steps of (a) providing a semiconductor wafer having a pad electrode, a first conductive layer comprised of copper, a photoresist film, and a second conductive layer comprised of gold, (b) forming a protective film comprised of iodine on the surface of the second conductive layer, (c) removing the photoresist film, (d) irradiating the protective film with argon ions and removing the protective film, and (e) bringing a part of a bonding wire into contact with the surface of the second conductive layer.

The present invention: makes it possible to improve the reliability of a semiconductor device; and provides a method of manufacturing the semiconductor device comprising the steps of (a) providing a semiconductor wafer having a pad electrode, a first conductive layer comprised of copper, a photoresist film, and a second conductive layer comprised of gold, (b) forming a protective film comprised of iodine on the surface of the second conductive layer, (c) removing the photoresist film, (d) irradiating the protective film with argon ions and removing the protective film, and (e) bringing a part of a bonding wire into contact with the surface of the second conductive layer.

Reliability of a semiconductor device is improved. A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

Reliability of a semiconductor device is improved. A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

Reliability of a semiconductor device is improved.

A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.

Reliability of a semiconductor device is improved.

A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of temporarily joining the ball portion to the pad electrode through the first hydroxyl layer and the second hydroxyl layer, and after the first bonding step, a step of actually joining the ball portion to the pad electrode by performing a heat treatment on a semiconductor chip and a base material.