A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

PROBLEM: To provide a multi-layer preform sheet capable of forming a highly reliable and high-quality electric interconnect, an electro-conductive bonding portion and so forth that are less likely to produce the Kirkendall void.

SOLUTION: A multi-layer preform sheet having at least a first layer and a second layer, the first layer being composed of a solder material that contains an intermetallic compound, and the second layer containing a first metal having a melting point of 300° C. or above, and a second metal capable of forming an intermetallic compound with the first metal.

The present invention relates to an electronic module. In particular, to an electronic module which includes one or more components embedded in an installation base. The electronic module can be a module like a circuit board, which includes several components, which are connected to each other electrically, through conducting structures manufactured in the module. The components can be passive components, microcircuits, semiconductor components, or other similar components. Components that are typically connected to a circuit board form one group of components. Another important group of components are components that are typically packaged for connection to a circuit board. The electronic modules to which the invention relates can, of course, also include other types of components.

A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

A bonded assembly includes a first semiconductor die that includes first semiconductor devices, and a first pad-level dielectric layer and embedding first bonding pads; and a second semiconductor die that includes second semiconductor devices, and a second pad-level dielectric layer embedding second bonding pads that includes a respective second pad base portion. Each of the first bonding pads includes a respective first pad base portion and a respective first metal alloy material portion having a higher coefficient of thermal expansion (CTE) than the respective first pad base portion. Each of the second bonding pads is bonded to a respective one of the first bonding pads.

A package structure includes a semiconductor die, a first insulating encapsulant, a plurality of first conductive features, an interconnect structure and bump structures. The semiconductor die includes a plurality of conductive pillars made of a first material. The first insulating encapsulant is encapsulating the semiconductor die. The first conductive features are disposed on the semiconductor die and electrically connected to the conductive pillars. The first conductive features include at least a second material different from the first material. The interconnect structure is disposed on the first conductive features, wherein the interconnect structure includes a plurality of connection structures made of the second material. The bump structures are electrically connecting the first conductive features to the connection structures, wherein the bump structures include a third material different from the first material and the second material.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.