An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.

Microelectronic assemblies fabricated using hybrid manufacturing with modified via-last process are disclosed. The fabrication approach is based on using hybrid manufacturing to bond first and second IC structures originally provided on different dies but filling at least portions of vias that are supposed to couple across a bonding interface between the first and second IC structures with electrically conductive materials after the IC structures have been bonded. A resulting microelectronic assembly that includes the first and second IC structures bonded together may have vias extending through all of the first IC structure and into the second IC structure, thus providing electrical coupling between one or more components of the first IC structure and those of the second IC structure, where an electrically conductive material in the individual vias is continuous through the first IC structure and at least a portion of the second IC structure.

Microelectronic assemblies fabricated using hybrid manufacturing with modified via-last process are disclosed. The fabrication approach is based on using hybrid manufacturing to bond first and second IC structures originally provided on different dies but filling at least portions of vias that are supposed to couple across a bonding interface between the first and second IC structures with electrically conductive materials after the IC structures have been bonded. A resulting microelectronic assembly that includes the first and second IC structures bonded together may have vias extending through all of the first IC structure and into the second IC structure, thus providing electrical coupling between one or more components of the first IC structure and those of the second IC structure, where an electrically conductive material in the individual vias is continuous through the first IC structure and at least a portion of the second IC structure.

At least one polymer material may be employed to facilitate bonding between the semiconductor dies. Plasma treatment, formation of a blended polymer, or formation of polymer hairs may be employed to enhance bonding. Alternatively, air gaps can be formed by subsequently removing the polymer material to reduce capacitive coupling between adjacent bonding pads.

At least one polymer material may be employed to facilitate bonding between the semiconductor dies. Plasma treatment, formation of a blended polymer, or formation of polymer hairs may be employed to enhance bonding. Alternatively, air gaps can be formed by subsequently removing the polymer material to reduce capacitive coupling between adjacent bonding pads.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.

A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.

A first metal layer can be deposited over first dielectric material layers of a first substrate, and can be patterned into first bonding pads. A first low-k material layer can be formed over the first bonding pads. The first low-k material layer includes a low-k dielectric material such as a MOF dielectric material or organosilicate glass. A second semiconductor die including second bonding pads can be provided. The first bonding pads are bonded to the second bonding pads to form a bonded assembly.

Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having an annular PSPI region formed under a BLM pad. An annular region is formed under a barrier layer metallurgy (BLM) pad. The annular region includes a photosensitive polyimide (PSPI). A conductive pedestal is formed on a surface of the BLM pad and a solder bump is formed on a surface of the conductive pedestal. The annular PSPI region reduces wafer warpage and ULK peeling stress.