The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a first semiconductor layer, a second semiconductor layer, and a first, a second and a third bonding conductors. The first semiconductor layer includes a first top surface. The second semiconductor layer is disposed over the first semiconductor layer, and the second semiconductor layer includes a second top surface. The first bonding conductor is disposed over the first top surface. The second bonding conductor is disposed over the second top surface. The third bonding conductor is in contact with the first bonding conductor and the second bonding conductor, the first bonding conductor is different from the second bonding conductor, and the third bonding conductor includes a silicide material formed from the first bonding conductor and the second bonding conductor.

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a first semiconductor layer, a second semiconductor layer, and a first, a second and a third bonding conductors. The first semiconductor layer includes a first top surface. The second semiconductor layer is disposed over the first semiconductor layer, and the second semiconductor layer includes a second top surface. The first bonding conductor is disposed over the first top surface. The second bonding conductor is disposed over the second top surface. The third bonding conductor is in contact with the first bonding conductor and the second bonding conductor, the first bonding conductor is different from the second bonding conductor, and the third bonding conductor includes a silicide material formed from the first bonding conductor and the second bonding conductor.

Exemplary embodiments for redistribution layers of integrated circuits are disclosed. The redistribution layers of integrated circuits of the present disclosure include one or more arrays of conductive contacts that are configured and arranged to allow a bonding wave to displace air between the redistribution layers during bonding. This configuration and arrangement of the one or more arrays minimize discontinuities, such as pockets of air to provide an example, between the redistribution layers during the bonding.

Exemplary embodiments for redistribution layers of integrated circuits are disclosed. The redistribution layers of integrated circuits of the present disclosure include one or more arrays of conductive contacts that are configured and arranged to allow a bonding wave to displace air between the redistribution layers during bonding. This configuration and arrangement of the one or more arrays minimize discontinuities, such as pockets of air to provide an example, between the redistribution layers during the bonding.