The present invention relates to a conductive composition containing a conductive metal powder and a resin component, in which the conductive metal powder contains at least a metal flake having a crystalline structure in which a metal crystal grows in a flake shape, and the resin component contains an aromatic amine skeleton.

The present invention relates to a conductive composition containing a conductive metal powder and a resin component, in which the conductive metal powder contains at least a metal flake having a crystalline structure in which a metal crystal grows in a flake shape, and the resin component contains an aromatic amine skeleton.

There are provided a stacked type semiconductor device and a manufacturing method of the stacked type semiconductor device. The stacked type semiconductor device includes: semiconductor chips stacked to overlap with each other; through electrodes respectively penetrating the semiconductor chips, the through electrodes being bonded to each other; and empty gaps respectively buried in the through electrodes.

There are provided a stacked type semiconductor device and a manufacturing method of the stacked type semiconductor device. The stacked type semiconductor device includes: semiconductor chips stacked to overlap with each other; through electrodes respectively penetrating the semiconductor chips, the through electrodes being bonded to each other; and empty gaps respectively buried in the through electrodes.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed above a first substrate. A first bonding layer including a first bonding contact is formed above the first device layer. The first bonding contact is made of a first indiffusible conductive material. A second device layer is formed above a second substrate. A second bonding layer including a second bonding contact is formed above the second device layer. The first substrate and the second substrate are bonded in a face-to-face manner, such that the first bonding contact is in contact with the second bonding contact at a bonding interface.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed above a first substrate. A first bonding layer including a first bonding contact is formed above the first device layer. The first bonding contact is made of a first indiffusible conductive material. A second device layer is formed above a second substrate. A second bonding layer including a second bonding contact is formed above the second device layer. The first substrate and the second substrate are bonded in a face-to-face manner, such that the first bonding contact is in contact with the second bonding contact at a bonding interface.

A semiconductor composite structure includes an electrically conductive bump, and a patterned bonding layer. The electrically conductive bump includes a body portion for being electrically connected to a metal layer of a semiconductor substrate, and a contact portion disposed on the body portion opposite to the metal layer. The patterned bonding layer is disposed on the contact portion opposite to the body portion, and includes an electrically conductive portion and a recess portion depressed relative to the electrically conductive portion. An etching selectivity ratio of the conductive portion relative to the contact portion is greater than 1. A method for making the semiconductor composite structure and a semiconductor device are also disclosed.

A semiconductor composite structure includes an electrically conductive bump, and a patterned bonding layer. The electrically conductive bump includes a body portion for being electrically connected to a metal layer of a semiconductor substrate, and a contact portion disposed on the body portion opposite to the metal layer. The patterned bonding layer is disposed on the contact portion opposite to the body portion, and includes an electrically conductive portion and a recess portion depressed relative to the electrically conductive portion. An etching selectivity ratio of the conductive portion relative to the contact portion is greater than 1. A method for making the semiconductor composite structure and a semiconductor device are also disclosed.

The present disclosure relates to a microelectronics package with significantly reduced delamination/cracking at solder joints, and a process for making the same. The disclosed microelectronics package includes a carrier, a solder joint region over the carrier, a top intermetallic (IMC) layer over the solder joint region, and a device die over the top IMC layer. Herein, the device die includes a substrate, an active device over the substrate, a top barrier layer underneath the substrate, and a backside metal layer vertically between the top IMC layer and the top barrier layer. The backside metal layer is formed of gold (Au) with a thickness at least 0.5 μm. The top IMC layer comprises gold nickel tin (AuNiSn) or gold platinum tin (AuPtSn), and the solder joint region comprises an Au-rich gold-tin (Au.sub.5Sn) and gold-tin (AuSn) eutectic mixture.

According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first electrode extending in a first direction through the semiconductor substrate between the first surface and the second surface, a first wiring layer on the first surface and electrically connected to the first electrode, and a second wiring layer on the first wiring layer, the first wiring layer being between the semiconductor substrate and the second wiring layer in the first direction. The second wiring layer includes a connection region at which a second electrode is connected and a first air gap between the connection region and an outer edge of the second wiring layer in a second direction crossing the first direction.