Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

Systems and methods described herein may include a first semiconductor layer with a first lattice constant, a rare earth pnictide buffer epitaxially grown over the first semiconductor, wherein a first region of the rare earth pnictide buffer adjacent to the first semiconductor has a net strain that is less than 1%, a second semiconductor layer epitaxially grown over the rare earth pnictide buffer, wherein a second region of the rare earth pnictide buffer adjacent to the second semiconductor has a net strain that is a desired strain, and wherein the rare earth pnictide buffer may comprise one or more rare earth elements and one or more Group V elements. In some examples, the desired strain is approximately zero.

In an embodiment, a method of fabricating a semiconductor device includes providing a first substrate structure, the first substrate structure including a first substrate body, a first conductive connection structure and a first two-dimensional inorganic layer having negative charges disposed adjacent to each other over the first substrate body, providing a second substrate structure, the second substrate structure including a second substrate body, a second conductive connection structure and a second two-dimensional inorganic layer having negative charges disposed adjacent to each other over the second substrate body, and joining the first and second substrate structure to each other such that the first conductive connection structure and the second conductive connection structure are connected to each other, and the first two-dimensional inorganic layer and the second two-dimensional inorganic layer are joined to each other.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

A bonding structure, a package structure, and a method for manufacturing a package structure are provided. The package structure includes a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The first passivation layer is disposed on the first substrate and has an upper surface. The first passivation layer and the first substrate define a first cavity. The first conductive layer is disposed in the first cavity and has an upper surface. A portion of the upper surface of the first conductive layer is below the upper surface of the first passivation layer. The first conductive bonding structure is disposed on the first conductive layer.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A semiconductor package includes a substrate, a plurality of semiconductor devices stacked on the substrate, a plurality of underfill fillets disposed between the plurality of semiconductor devices and between the substrate and the plurality of semiconductor devices, and molding resin surrounding the plurality of semiconductor devices. At least one of the underfill fillets is exposed from side surfaces of the molding resin.

A hybrid bonding structure and a semiconductor including the hybrid bonding structure are provided. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste may include solder particles including at least one of In, Zn, SnBiAg alloy, or SnBi alloy, and ceramic particles. The solder paste may include a flux. The solder particles may include Sn(42.0 wt %)-Ag(0.4 wt %)-Bi(57.5−X) wt %, and the ceramic particles include CeO.sub.2(X) wt %, where 0.05≤X≤0.1.