A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

The present application discloses a method for fabricating a semiconductor device with a connection structure. The method includes providing a first semiconductor structure comprising a plurality of first conductive features adjacent to a top surface of the first semiconductor structure; forming a connection structure comprising a connection insulating layer on the top surface of the first semiconductor structure, a connection layer in the connection insulating layer, and a plurality of first porous interlayers on the plurality of first conductive features and in the connection insulating layer; and forming a second semiconductor structure comprising a plurality of second conductive features on the plurality of first porous interlayers.

The present application discloses a method for fabricating a semiconductor device with a connection structure. The method includes providing a first semiconductor structure comprising a plurality of first conductive features adjacent to a top surface of the first semiconductor structure; forming a connection structure comprising a connection insulating layer on the top surface of the first semiconductor structure, a connection layer in the connection insulating layer, and a plurality of first porous interlayers on the plurality of first conductive features and in the connection insulating layer; and forming a second semiconductor structure comprising a plurality of second conductive features on the plurality of first porous interlayers.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, a second insulating layer positioned above the first insulating layer, a plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and an alleviation structure positioned between the first insulating layer and the second insulating layer. The alleviation structure includes a first connecting interlayer respectively electrically coupled to the plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and a plurality of alleviation structures positioned between the plurality of first conductive features in the first insulating layer and the plurality of first conductive features in the second insulating layer, wherein a porosity of the plurality of alleviation structures is between about 25% and about 100%.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first insulating layer positioned above the substrate, a second insulating layer positioned above the first insulating layer, a plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and an alleviation structure positioned between the first insulating layer and the second insulating layer. The alleviation structure includes a first connecting interlayer respectively electrically coupled to the plurality of first conductive features positioned in the first insulating layer and the second insulating layer, and a plurality of alleviation structures positioned between the plurality of first conductive features in the first insulating layer and the plurality of first conductive features in the second insulating layer, wherein a porosity of the plurality of alleviation structures is between about 25% and about 100%.

An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.

An integrated circuit interconnects are described herein that are suitable for forming integrated circuit chip packages. In one example, an integrated circuit interconnect is embodied in a wafer that includes a substrate having a plurality of integrated circuit (IC) dice formed thereon. The plurality of IC dice include a first IC die having first solid state circuitry and a second IC die having second solid state circuitry. A first contact pad is disposed on the substrate and is coupled to the first solid state circuitry. A first solder ball is disposed on the first contact pad. The first solder ball has a substantially uniform oxide coating formed thereon.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure including a plurality of first conductive features adjacent to a top surface of the first semiconductor structure, a second semiconductor structure positioned above the first semiconductor structure and including a plurality of second conductive features adjacent to a bottom surface of the second semiconductor structure, and a connection structure positioned between the first semiconductor structure and the second semiconductor structure. The connection structure includes a connection layer electrically coupled to the plurality of first conductive features and the plurality of second conductive features, and a plurality of first porous interlayers positioned between the plurality of first conductive features and the plurality of second conductive features. A porosity of the plurality of first porous interlayers is between about 25% and about 100%.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure including a plurality of first conductive features adjacent to a top surface of the first semiconductor structure, a second semiconductor structure positioned above the first semiconductor structure and including a plurality of second conductive features adjacent to a bottom surface of the second semiconductor structure, and a connection structure positioned between the first semiconductor structure and the second semiconductor structure. The connection structure includes a connection layer electrically coupled to the plurality of first conductive features and the plurality of second conductive features, and a plurality of first porous interlayers positioned between the plurality of first conductive features and the plurality of second conductive features. A porosity of the plurality of first porous interlayers is between about 25% and about 100%.