Patent classifications
H01L2924/07802
Semiconductor device and method of manufacturing the same
A semiconductor device has a substrate, a first circuit, a first inductor, a second circuit and a second inductor IND2. The substrate includes a first region and a second region, which are regions different from each other. The first circuit is formed on the first region. The first inductor is electrically connected with the first circuit. The second circuit is formed on the second regions. The second inductor is electrically connected with the second circuit and formed to face the first inductor. A penetrating portion is formed in the substrate. The penetrating portion is formed such that the penetrating portion surrounds one or both of the first circuit and the second circuit in plan view.
Semiconductor device and method of manufacturing the same
A semiconductor device has a substrate, a first circuit, a first inductor, a second circuit and a second inductor IND2. The substrate includes a first region and a second region, which are regions different from each other. The first circuit is formed on the first region. The first inductor is electrically connected with the first circuit. The second circuit is formed on the second regions. The second inductor is electrically connected with the second circuit and formed to face the first inductor. A penetrating portion is formed in the substrate. The penetrating portion is formed such that the penetrating portion surrounds one or both of the first circuit and the second circuit in plan view.
Semiconductor package and method of manufacturing the same
A semiconductor package includes a semiconductor chip; a redistribution insulating layer including a first opening; an external connection bump including a first part in the first opening; a lower bump pad including a first surface in physical contact with the first part of the external connection bump and a second surface opposite to the first surface, wherein the first surface and the redistribution insulating layer partially overlap; and a redistribution pattern that electrically connects the lower bump pad to the semiconductor chip.
Method for manufacturing an electronic module and electronic module
This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.
Method for manufacturing an electronic module and electronic module
This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.
IC PACKAGE WITH MULTIPLE DIES
An integrated circuit (IC) package includes a first die with a first surface overlaying a substrate. The first die includes a first metal pad at a second surface opposing the first surface. The IC package also includes a dielectric layer having a first surface contacting the second surface of the first die. The IC package further includes a second die with a surface that contacts a second surface of the dielectric layer. The second die includes a second metal pad aligned with the first metal pad of the first die. A plane perpendicular to the second surface of the first die intersects the first metal pad and the second metal pad.
Chip package with antenna element
Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.
Chip package with antenna element
Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.
PACKAGE STRUCTURE
A package structure includes a semiconductor device and an adhesive pattern. The adhesive pattern surrounds the semiconductor device, wherein an angle θ is formed between a sidewall of the semiconductor device and a sidewall of the adhesive pattern, 0°<θ<90° wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.
Lead frame package having conductive surfaces
Disclosed is a device including a first finger of a plurality of lead fingers of a lead frame connected to a first flag. A second finger of the plurality of lead fingers of the lead frame is connected to a second flag. A semiconductor die is coupled to the lead frame. An encapsulant covers the semiconductor die, the lead frame, and a first end of the plurality of lead fingers, and excludes the first flag and the second flag. The first flag and the second flag are separated and electrically isolated from one another by the encapsulant.