Microelectronic devices and methods for manufacturing such devices are disclosed herein. In one embodiment, a packaged microelectronic device can include an interposer substrate with a plurality of interposer contacts. A microelectronic die is attached and electrically coupled to the interposer substrate. The device further includes a casing covering the die and at least a portion of the interposer substrate. A plurality of electrically conductive through-casing interconnects are in contact with and projecting from corresponding interposer contacts at a first side of the interposer substrate. The through-casing interconnects extend through the thickness of the casing to a terminus at the top of the casing. The through-casing interconnects comprise a plurality of filaments attached to and projecting away from the interposer contacts in a direction generally normal to the first side of the interposer substrate.

A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

An electronic element mounting substrate includes: a first substrate including a first principal face; a second substrate located inside the first substrate in a plan view of the electronic element mounting substrate, the second substrate being made of a carbon material; a third substrate located between the first substrate and the second substrate in the plan view, the third substrate being made of a carbon material; and a first mounting portion for mounting a first electronic element, the first mounting portion being located on the first principal face side in a thickness direction of the substrate. The second substrate and the third substrate each have a low heat conduction direction and a high heat conduction direction. The second substrate and the third substrate is arranged so that the low heat conduction directions thereof are perpendicular to each other, and the high heat conduction directions thereof are perpendicular to each other.

An integrated circuit chip is attached to a support that includes first conductive elements. First conductive pads are located on the integrated circuit chip and are electrically coupled to the first conductive elements by conductive wires. The integrated circuit chip further includes a conductive track. A switch circuit is provided to selectively electrically connect each first conductive pad to the conductive track. To test the conductive wires, a group of first conductive pads are connected by their respective switch circuits to the conductive track and current flow between corresponding first conductive elements is measured.

A power module (2) including a plurality of rectangular electrical power components (4, 4′) arranged on a substrate (6). The sides of at least a subset of the rectangular electrical power components (4, 4′) are not orthogonal to a line (12, 12′) that passes through the geometric centre (C) of the rectangular electrical power components (4, 4′) of the subset and extends orthogonal to a side (L, M) of the substrate (6).

A semiconductor package includes an interposer, a semiconductor element installed on a first surface of the interposer, bumps formed on a second surface of the interposer, and a chip component installed on the second surface of the interposer. The interposer is a silicon interposer; the semiconductor element is flip-chip mounted on the first surface of the interposer; the chip component is a thin film passive element formed by carrying out a thin film process on a silicon substrate, and a pad being formed on one surface of the thin film passive element; and the pad of the chip component is connected to a land formed on the second surface of the interposer using a conductive bonding material. According to this structure, the reliability of a bond between the interposer and the chip component of the semiconductor package can be ensured while achieving a small size.

A light-emitting device includes: a package defining a recess; a light-emitting element disposed on a bottom surface of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element. The sealing member includes a filler-containing layer which contains a filler and covers the light-emitting element, and a light-transmissive layer disposed on the filler-containing layer. The recess is further defined by a lateral surface having a stepped portion between the bottom surface of the recess and an opening of the recess. The light-transmissive layer covers the stepped portion. An upper surface of the light-transmissive layer is downwardly recessed.

A transferring method includes providing an adsorption device, using the adsorption device to attract and hold a plurality of light emitting diodes (LEDs), providing a target substrate with a plurality of spots of anisotropic conductive adhesive on a surface of the target substrate; moving the adsorption device or the target substrate wherein each of the plurality of LEDs adsorbed by the adsorption device becomes in contact with one of the plurality of spots of anisotropic conductive adhesive; and curing the plurality of spots of anisotropic conductive adhesive on the target substrate and moving away the adsorption device.

A semiconductor package is provided, including: a substrate; a first semiconductor element disposed on the substrate and having a first conductive pad grounded to the substrate; a conductive layer formed on the first semiconductor element and electrically connected to the substrate; a second semiconductor element disposed on the first semiconductor element through the conductive layer; and an encapsulant formed on the substrate and encapsulating the first and second semiconductor elements. Therefore, the first and second semiconductor elements are protected from electromagnetic interference (EMI) shielding with the conductive layer being connected to the grounding pad of the substrate. A fabrication method of the semiconductor package is also provided.

A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of non-solder electrical connectors underlying and electrically coupled to the plurality of redistribution lines. The plurality of non-solder electrical connectors includes a corner electrical connector. The corner electrical connector is elongated. An electrical connector is farther away from the corner than the corner electrical connector, wherein the electrical connector is non-elongated.