A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.

A transistor amplifier package includes a base, one or more transistor dies on the base, first and second leads coupled to the one or more transistor dies and defining respective radio frequency (RF) signal paths, and an isolation structure on the base between the respective RF signal paths. The isolation structure includes first and second wire bonds. The first and second wire bonds may have a crossed configuration defining at least one cross point therebetween. Related wire bond-based isolation structures are also discussed.

A method of producing a structure comprising a substrate (11) having at least one integral first face at a first angle relative to a normal from the substrate, at least one second integral second face at a second angle relative to a normal from the substrate; with a cavity in the structure between the first and second faces; the method comprising the steps of: coating a portion (15) of the first face with a first conducting layer; coating a portion (18) of the second face with a second conducting layer; and depositing in the cavity an active material (31) to provide ohmic and rectifying contacts for insertion or extraction of charge from the active material by way of the first and second conducting layers. The active material may be photovoltaic, light emitting or ion conducting.