Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a first glass layer including a first conductive through-glass via (TGV); and a second glass layer including a second conductive TGV, wherein the second glass layer is on and bonded to the first glass layer, the second conductive TGV is electrically coupled to the first conductive TGV, and the first conductive TGV and the second conductive TGV have an aspect ratio between 20:1 and 50:1.