A wiring base includes a base having a first surface, at least one metal layer positioned on the first surface, at least one lead terminal positioned on the metal layer, and a joining member that is positioned on the metal layer and joins the lead terminal to the metal layer. The lead terminal has a first portion to be in contact with the joining member and also has a second portion being continuous with the first portion. In a cross section of the lead terminal orthogonal to a longitudinal direction of the lead terminal, the first portion has two concave surfaces that are formed near the metal layer so as to be disposed opposite to each other across a center in a transverse direction of the lead terminal.

A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.

A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.

A method includes forming a stack of semiconductor die. The stack includes a first semiconductor die, a second semiconductor die and a third semiconductor die. The first semiconductor die is stacked above the second semiconductor die and the third semiconductor die is stacked above the first semiconductor die. A first optical transmitter and a first optical receiver are provided in the first semiconductor die, a second optical transmitter is provided in the second semiconductor die, and a second optical receiver is provided in the third semiconductor die. A first optical signal is transmitted from the first optical transmitter in the first semiconductor die to the second optical receiver in the third semiconductor die. A second optical signal is transmitted from the second optical transmitter in the second semiconductor die to the first optical receiver in the first semiconductor die.

A method for manufacturing an electronic component includes preparing a mounting substrate provided with a first region to mount an electronic component thereon and a second region having conductivity, covering the second region with resin, applying a metal paste on the first region, mounting the electronic component on the first region with the metal paste, and removing the resin covering the second region. The mounting includes heating the mounting substrate to cure the metal paste with the electronic components being placed on the metal paste applied on the first region. The resin peeled from the second region by the heating is removed in the removing.

There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

In an optical receiver circuit which suppresses an unnecessary increase in impedance and occurrences of resonance and radiation noise and which produces preferable high-frequency transmission characteristics, a PD submount mounted with a PD chip and a chip capacitor and a TIA carrier mounted with a TIA chip are electrically connected to each other by a bonding wire. The chip includes an anode electrode pad and a cathode electrode pad, anode electrode-side ground pads are formed at positions that sandwich the pad, and cathode electrode-side ground pads are formed at positions that sandwich the pad. A wire electrically connects the pad and a signal pad for input of the chip to each other, a wire electrically connects the pad and the capacitor to each other, and a wire electrically connects the pads and the pads to each other.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

A light emitting device includes: a base having a first stepped portion and a second stepped portion; a light emitting element; an electronic member configured to be irradiated by light emitted from the light emitting element; a first wiring region located on the first stepped portion; a second wiring region located on the second stepped portion; wires connected to the light emitting element and the electronic member. The wires includes a first and second wires. The first wire has a first end that is connected to the first wiring region, and a second end. The second wire has a first end that is connected to the second wiring region, and a second end. A position of the second end of the first wire relative to the bottom face is lower than a position of the second end of the second wire relative to the bottom face.