A method of manufacturing a semiconductor package includes: hybrid-bonding a semiconductor chip, including a through-silicon via, to an upper surface of a semiconductor wafer, wet-etching a surface of the semiconductor chip to expose the through-silicon via, covering the exposed through-silicon via with a material, including an organic resin and an inorganic filler, to form an encapsulation layer, removing an upper surface of the encapsulation layer to expose the through-silicon via, and forming a redistribution structure electrically connected to the through-silicon via.

A memory device includes an array of memory cells configured on a die or chip and coupled to sense lines and access lines of the die or chip and a respective sense amplifier configured on the die or chip coupled to each of the sense lines. Each of a plurality of subsets of the sense lines is coupled to a respective local input/output (I/O) line on the die or chip for communication of data on the die or chip and a respective transceiver associated with the respective local I/O line, the respective transceiver configured to enable communication of the data to one or more device off the die or chip.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A PoP semiconductor device has a top semiconductor package disposed over a bottom semiconductor package. The top semiconductor package has a substrate and a first semiconductor die disposed over the substrate. First and second encapsulants are deposited over the first semiconductor die and substrate. A first build-up interconnect structure is formed over the substrate after depositing the second encapsulant. The top package is disposed over the bottom package. The bottom package has a second semiconductor die and modular interconnect units disposed around the second semiconductor die. A second build-up interconnect structure is formed over the second semiconductor die and modular interconnect unit. The modular interconnect units include a plurality of conductive vias and a plurality of contact pads electrically connected to the conductive vias. The I/O pattern of the build-up interconnect structure on the top semiconductor package is designed to coincide with the I/O pattern of the modular interconnect units.

A packaging technology to improve performance of an AI processing system resulting in an ultra-high bandwidth system. An IC package is provided which comprises: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die can be a first logic die (e.g., a compute chip, CPU, GPU, etc.) while the second die can be a compute chiplet comprising ferroelectric or paraelectric logic. Both dies can include ferroelectric or paraelectric logic. The ferroelectric/paraelectric logic may include AND gates, OR gates, complex gates, majority, minority, and/or threshold gates, sequential logic, etc. The IC package can be in a 3D or 2.5D configuration that implements logic-on-logic stacking configuration. The 3D or 2.5D packaging configurations have chips or chiplets designed to have time distributed or spatially distributed processing. The logic of chips or chiplets is segregated so that one chip in a 3D or 2.5D stacking arrangement is hot at a time.

Embodiments described herein may be related to apparatuses, processes, and techniques related to via structures and/or planar structures within a glass core of a substrate to facilitate high-speed signaling with a die coupled with the substrate. In embodiments, the substrate may be coupled with an interposer to enable high-speed signaling between a compute die (or tile) and a storage die (or tile) that may be remote to the substrate. Other embodiments may be described and/or claimed.

A semiconductor package is provided in which a first adhesive film includes a first extension portion extending relative to a side surface of a first semiconductor chip in a second direction, perpendicular to the first direction, the first extension portion has an upper surface including a first recess concave toward a base chip, each of the plurality of second adhesive films includes a second extension portion extending relative to side surfaces of the plurality of second semiconductor chips in the second direction, and the second extension portion has an upper surface including a second recess concave in the first direction and a lower surface including a protrusion in the first recess or the second recess.

Described is a packaging technology to improve performance of an AI processing system. An IC package is provided which comprises: a substrate; a first die on the substrate, and a second die stacked over the first die. The first die includes memory and the second die includes computational logic. The first die comprises DRAM having bit-cells. The memory of the first die may store input data and weight factors. The computational logic of the second die is coupled to the memory of the first die. In one example, the second die is an inference die that applies fixed weights for a trained model to an input data to generate an output. In one example, the second die is a training die that enables learning of the weights. Ultra high-bandwidth is changed by placing the first die below the second die. The two dies are wafer-to-wafer bonded or coupled via micro-bumps.

Embodiments disclosed herein include die modules and electronic packages. In an embodiment, a die module comprises a base die where the base die comprises a functional block. In an embodiment, the die module further comprises a chiplet coupled to the base die proximate to the functional block. In an embodiment, the chiplet comprises similar functionality as the functional block.

An integrated circuit package includes a first integrated circuit die, a spacer die coupled in the integrated circuit package in a location designed to house a second integrated circuit die, and a package substrate coupled to the first integrated circuit die and to the spacer die.