Patent classifications
H01L2924/1434
Semiconductor package
A semiconductor package includes a base substrate; an interposer substrate including a semiconductor substrate having a first surface facing the base substrate and a second surface, opposing the first surface, and a passivation layer on at least a portion of the first surface; a plurality of connection bumps between the base substrate and the interposer substrate; an underfill resin in a space between the base substrate and the interposer substrate; and a first semiconductor chip and a second semiconductor chip on the interposer substrate. The interposer substrate has a first region, in which the plurality of connection bumps are included, and a second region and a third region adjacent a periphery of the first region, and the passivation layer is in the second region and includes a first embossed pattern in the second region.
PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE WHICH INCLUDE MULTI-LAYERED PHOTOSENSITIVE INSULATING LAYER, AND METHOD OF MANUFACTURING THE SAME
A printed circuit board may include a substrate body portion, conductive patterns on a top surface of the substrate body portion, and a photosensitive insulating layer on the top surface of the substrate body portion and including an opening exposing at least one of the conductive patterns. The photosensitive insulating layer includes first to third sub-layers stacked sequentially. The first sub-layer includes an amine compound or an amide compound A refractive index of the second sub-layer is lower than a refractive index of the third sub-layer. A photosensitizer content of the second sub-layer is higher than a photosensitizer content of the third sub-layer.
Package and manufacturing method thereof
A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.
Scalable polylithic on-package integratable apparatus and method
Described is an apparatus which comprises: a first die including: a processing core; a crossbar switch coupled to the processing core; and a first edge interface coupled to the crossbar switch; and a second die including: a first edge interface positioned at a periphery of the second die and coupled to the first edge interface of the first die, wherein the first edge interface of the first die and the first edge interface of the second die are positioned across each other; a clock synchronization circuit coupled to the second edge interface; and a memory interface coupled to the clock synchronization circuit.
Ceramic interposers for on-die interconnects
Ceramic interposers in a disaggregated-die semiconductor package allow for useful signal integrity and interconnecting components. Low-loss ceramics are used to tune ceramic interposers for a die assembly that may have components from different process-technology nodes.
Semiconductor package
In a method of manufacturing a semiconductor package, a first semiconductor device is arranged on a package substrate. An electrostatic discharge structure is formed on at least one ground substrate pad exposed from an upper surface of the package substrate. A plurality of second semiconductor devices is stacked on the package substrate and spaced apart from the first semiconductor device, the electrostatic discharge structure being interposed between the first semiconductor device and the plurality of second semiconductor devices. A molding member is formed on the package substrate to cover the first semiconductor device and the plurality of second semiconductor devices.
Semiconductor package test system and semiconductor package fabrication method using the same
A semiconductor package test system includes a test pack on which a semiconductor package is loaded, and a semiconductor package testing apparatus. The semiconductor package testing apparatus includes a receiving section that receives the test pack. The receiving section includes a pack receiving slot into which the test pack is inserted. The test pack includes a chuck on which the semiconductor package is fixed, a probe block disposed above the chuck, and a connection terminal. The receiving section includes a receiving terminal that is electrically connected to the connection terminal when the receiving terminal contacts the connection terminal. The probe block includes at least one needle configured to be electrically connected to the semiconductor package disposed on the chuck upon the chuck moving toward the semiconductor package. The receiving section is provided in plural.
Semiconductor Device and Method of Forming Build-Up Interconnect Structures Over a Temporary Substrate
A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.
Pixel Tile Structures and Layouts
An overall displacement tolerance applicable to each pixel tile in a plurality of pixel tiles to be used as parts of an image rendering surface is determined. Each pixel tile in the plurality of pixel tiles comprises a plurality of sub-pixels. Random displacements are generated in each pixel tile in the plurality of pixel tiles based on the overall displacement tolerance. The plurality of image rendering tiles with the random displacements are combined into the image rendering surface.
Pixel Tile Structures and Layouts
An overall displacement tolerance applicable to each pixel tile in a plurality of pixel tiles to be used as parts of an image rendering surface is determined. Each pixel tile in the plurality of pixel tiles comprises a plurality of sub-pixels. Random displacements are generated in each pixel tile in the plurality of pixel tiles based on the overall displacement tolerance. The plurality of image rendering tiles with the random displacements are combined into the image rendering surface.