A chip package structure is provided. The chip package structure includes a substrate. The chip package structure includes a chip over the substrate. The chip package structure includes a first heat conductive layer between the heat-spreading wall structure and the chip. The chip package structure includes a second heat conductive layer over the chip and surrounded by the first heat conductive layer. The chip package structure includes a heat-spreading lid over the substrate and covering the heat-spreading wall structure, the first heat conductive layer, the second heat conductive layer, and the chip. The heat-spreading lid is bonded to the substrate, the heat-spreading wall structure, the first heat conductive layer, and the second heat conductive layer.

A semiconductor device, including a semiconductor element; a case having a frame portion, which has an inner periphery that surrounds a housing space for accommodating the semiconductor element; and a lid covering the housing space. The inner periphery of the frame portion has a stepped portion formed thereon, the stepped portion including a step supporting surface positioned at a level lower than a front surface of the frame portion and being approximately parallel to the front surface of the frame portion. The lid has a lateral surface surrounding the lid, and a front surface and a bottom surface approximately parallel to the step supporting surface. The lid has a reservoir formed in the front surface thereof and extending from the lateral surface, the reservoir having a reservoir surface positioned at a level lower than the front surface of the lid.

An electronic device disposed in a package that includes: an interposer, fan-out interconnect (FOI), and a lid. The interposer having first size and first surface upon which die terminals (DTs) are disposed and are configured to electrically couple to integrated circuit die (IC), and second surface upon which substrate terminals (STs) are disposed and are configured to electrically couple to substrate. The IC has second size smaller than the first size, and the IC is mounted on the first surface in electrical contact with the DTs, the interposer is mounted on third surface, and the package substrate has third size, larger than the first size. The FOI establishes electrical interconnection between DTs and STs, the DTs have first pitch size and the STs have second pitch size, larger than first pitch size. The lid has first section, configured to abut fourth surface, and second section, mounted on the third surface.

A semiconductor device includes: an insulating circuit substrate; a semiconductor element including a first main electrode bonded to a first conductor layer of the insulating circuit substrate via a first bonding material, a semiconductor substrate deposited on the first main electrode, and a second main electrode deposited on the semiconductor substrate; and a resistive element including a bottom surface electrode bonded to a second conductor layer of the insulating circuit substrate via a second bonding material, a resistive layer with one end electrically connected to the bottom surface electrode, and a top surface electrode electrically connected to another end of the resistive layer, wherein the first main electrode includes a first bonded layer bonded to the first bonding material, the bottom surface electrode includes a second bonded layer bonded to the second bonding material, and the first bonded layer and the second bonded layer have a common structure.

Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

A semiconductor device has a configuration in which a stacked assembly and a resin case are combined. The stacked assembly includes a semiconductor element, a stacked substrate on which the semiconductor element is mounted, and a metal substrate on which the stacked substrate is mounted. In the resin case, a notch groove is provided at a corner portion for reducing a stress. At least one of a width and a length of the notch groove is 2 mm or more.

A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.

A semiconductor module includes a semiconductor element, a substrate on which the semiconductor module is mounted, a heat radiating plate on which the substrate is mounted, a resin case, and a first main current electrode and a second main current electrode, in which in the first main current electrode and the second main current electrode, one end of each thereof is joined to a circuit pattern on the substrate, an other end of each thereof is extended through and incorporated in a side wall of the resin case so as to project outward of the resin case, and each thereof has at least a portion of overlap at which a part thereof overlaps in parallel with each other with a gap therebetween, and each thereof has a slope portion provided between an external projection portion and an internal projection portion.

Multi-component modules (MCMs) including configurable electromagnetic interference (EMI) shield structures, and related methods are disclosed. An EMI shield enclosing an IC or another electrical component in an MCM can protect other components within the MCM from EMI generated by the enclosed component. The EMI shield also protects the enclosed component from the EMI generated by other electrical components. An EMI shield with side-wall structures, in which vertical conductors supported by a wall medium electrically couple a lid of the EMI shield to a ground layer in a substrate, provides configurable EMI protection in an MCM. The EMI shield may also be employed to increase heat dissipation. The side-wall structures of the EMI shield are disposed on one or more sides of an electrical component and are configurable to provide a desired level of EMI isolation.

A semiconductor module includes an insulation circuit substrate in which circuit patterns are formed on an upper surface of an insulation plate, switching elements that are arranged on an upper surface of the circuit patterns, a first heat dissipation plate that is arranged on a lower surface of the insulation plate, a casing member that surrounds a periphery of the insulation circuit substrate, the switching elements, and the first heat dissipation plate such that a lower surface of the first heat dissipation plate is exposed, and a second heat dissipation plate that is arranged on an upper surface side of the switching elements such that a prescribed gap is provided. The casing member has notch portions having a depth corresponding to a thickness of the second heat dissipation plate. At least a portion of the second heat dissipation plate engages with the notch portions.