H01L2924/20301

Connecting device and circuit chip connecting method using connecting device

A connecting device for connecting a circuit chip to a substrate is provided. The connecting device includes: a main body having a first opening and a second opening; a vibration part on the main body, the vibration part being configured to vibrate the main body; and an intake part coupled with the first and second openings to adsorb the circuit chip to the main body. Both the first and second openings are open at a surface of the main body to which the circuit chip is adsorbed, and the second opening is arranged in the first opening on a plane.

Method for Bonding an Electrically Conductive Element to a Bonding Partner
20190356098 · 2019-11-21 ·

One aspect relates to a method that includes bonding an electrically conductive element to a bonding surface of a bonding partner by increasing a temperature of a bonding section of the electrically conductive element from an initial temperature to an increased temperature by passing an electric heating current through the bonding section, and pressing the bonding section with a pressing force against the bonding surface using a sonotrode and introducing an ultrasonic vibration into the bonding section via the sonotrode such that the increased temperature of the bonding section, the ultrasonic signal in the bonding section and the pressing force are simultaneously present and cause the formation of a tight and direct bond between the bonding section and the bonding surface.

Method for Bonding an Electrically Conductive Element to a Bonding Partner
20190356098 · 2019-11-21 ·

One aspect relates to a method that includes bonding an electrically conductive element to a bonding surface of a bonding partner by increasing a temperature of a bonding section of the electrically conductive element from an initial temperature to an increased temperature by passing an electric heating current through the bonding section, and pressing the bonding section with a pressing force against the bonding surface using a sonotrode and introducing an ultrasonic vibration into the bonding section via the sonotrode such that the increased temperature of the bonding section, the ultrasonic signal in the bonding section and the pressing force are simultaneously present and cause the formation of a tight and direct bond between the bonding section and the bonding surface.

Systems and methods for bonding semiconductor elements

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element, wherein the surfaces of each of the plurality of first conductive structures and the plurality of second conductive structures include aluminum; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures.

Systems and methods for bonding semiconductor elements

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Method of manufacturing semiconductor device
10134705 · 2018-11-20 · ·

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. In addition, the method of manufacturing a semiconductor device includes a step of, after the first step, applying the ultrasonic waves to the ball portion while pressing the ball portion with a second load larger than the first load, thereby bonding the ball portion and the first electrode.

Method of manufacturing semiconductor device
10134705 · 2018-11-20 · ·

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. In addition, the method of manufacturing a semiconductor device includes a step of, after the first step, applying the ultrasonic waves to the ball portion while pressing the ball portion with a second load larger than the first load, thereby bonding the ball portion and the first electrode.

CONNECTING DEVICE AND CIRCUIT CHIP CONNECTING METHOD USING CONNECTING DEVICE
20180211933 · 2018-07-26 ·

A connecting device for connecting a circuit chip to a substrate is provided. The connecting device includes: a main body having a first opening and a second opening; a vibration part on the main body, the vibration part being configured to vibrate the main body; and an intake part coupled with the first and second openings to adsorb the circuit chip to the main body. Both the first and second openings are open at a surface of the main body to which the circuit chip is adsorbed, and the second opening is arranged in the first opening on a plane.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20180182731 · 2018-06-28 ·

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. In addition, the method of manufacturing a semiconductor device includes a step of, after the first step, applying the ultrasonic waves to the ball portion while pressing the ball portion with a second load larger than the first load, thereby bonding the ball portion and the first electrode.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
20180182731 · 2018-06-28 ·

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. In addition, the method of manufacturing a semiconductor device includes a step of, after the first step, applying the ultrasonic waves to the ball portion while pressing the ball portion with a second load larger than the first load, thereby bonding the ball portion and the first electrode.