A tableted epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the tableted epoxy resin composition, the tableted epoxy resin composition satisfying the following conditions (i) a proportion of tablets of the tableted epoxy resin composition having a diameter of greater than or equal to 0.1 mm and less than 2.8 mm and a height of greater than or equal to 0.1 mm and less than 2.8 mm is about 97 wt % or more, as measured by sieve analysis using ASTM standard sieves; (ii) the tablets have a packed density of greater than about 1.7 g/mL; and (iii) a ratio of packed density to cured density of the tablets is about 0.6 to about 0.87.

A tableted epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the tableted epoxy resin composition, the tableted epoxy resin composition satisfying the following conditions (i) a proportion of tablets of the tableted epoxy resin composition having a diameter of greater than or equal to 0.1 mm and less than 2.8 mm and a height of greater than or equal to 0.1 mm and less than 2.8 mm is about 97 wt % or more, as measured by sieve analysis using ASTM standard sieves; (ii) the tablets have a packed density of greater than about 1.7 g/mL; and (iii) a ratio of packed density to cured density of the tablets is about 0.6 to about 0.87.

A tableted epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the tableted epoxy resin composition, the tableted epoxy resin composition satisfying the following conditions (i) a proportion of tablets of the tableted epoxy resin composition having a diameter of greater than or equal to 0.1 mm and less than 2.8 mm and a height of greater than or equal to 0.1 mm and less than 2.8 mm is about 97 wt % or more, as measured by sieve analysis using ASTM standard sieves; (ii) the tablets have a packed density of greater than about 1.7 g/mL; and (iii) a ratio of packed density to cured density of the tablets is about 0.6 to about 0.87.

A tableted epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the tableted epoxy resin composition, the tableted epoxy resin composition satisfying the following conditions (i) a proportion of tablets of the tableted epoxy resin composition having a diameter of greater than or equal to 0.1 mm and less than 2.8 mm and a height of greater than or equal to 0.1 mm and less than 2.8 mm is about 97 wt % or more, as measured by sieve analysis using ASTM standard sieves; (ii) the tablets have a packed density of greater than about 1.7 g/mL; and (iii) a ratio of packed density to cured density of the tablets is about 0.6 to about 0.87.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing either or both of Pd and Pt in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.

A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.